[go: up one dir, main page]

JPS57174448A - Production of photoconductive member - Google Patents

Production of photoconductive member

Info

Publication number
JPS57174448A
JPS57174448A JP56060153A JP6015381A JPS57174448A JP S57174448 A JPS57174448 A JP S57174448A JP 56060153 A JP56060153 A JP 56060153A JP 6015381 A JP6015381 A JP 6015381A JP S57174448 A JPS57174448 A JP S57174448A
Authority
JP
Japan
Prior art keywords
compds
raw material
formula
carbon atoms
constituting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56060153A
Other languages
Japanese (ja)
Other versions
JPS6145705B2 (en
Inventor
Isamu Shimizu
Kyosuke Ogawa
Junichiro Kanbe
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56060153A priority Critical patent/JPS57174448A/en
Priority to US06/354,898 priority patent/US4468443A/en
Priority to DE19823209055 priority patent/DE3209055A1/en
Publication of JPS57174448A publication Critical patent/JPS57174448A/en
Publication of JPS6145705B2 publication Critical patent/JPS6145705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form an extremely good photoconductive layer easily by mixing >=2 kinds of silicon compds. expressed by the specific formula at specific ratios and mixing these with materials consisting of carbon atoms as constituting atoms thereby constituting a raw material for formation of photoconductive layers. CONSTITUTION:A raw material for formation of photoconductive layers is constituted of at least 2 kinds of the compds. expressed by the formula SinH2n+2 (n is a positive integer), and a material consisting of carbon atoms as constituting atoms. The ratios of the compds. of the formula are such that with respect to the compd. of the lowest order of (n), for example Si2H6, the compds. of (n) of higher order than this, for example, Si3H8, Si4H10 are contained at >=1vol%, more preferably >=5vol%. There are, for example, methane, ethylene, acetylene, etc. as the raw material for introduction of carbon atoms, and these are mixed at about <=15vol% based on the vol. of the compds. of the formula. Such raw material is introduced in a gaseous state into a deposition chamber, the pressure wherein is held decreased, whereby electric discharge is caused, and a good photoconductive layer is formed over a wide area on a substrate.
JP56060153A 1981-03-12 1981-04-21 Production of photoconductive member Granted JPS57174448A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56060153A JPS57174448A (en) 1981-04-21 1981-04-21 Production of photoconductive member
US06/354,898 US4468443A (en) 1981-03-12 1982-03-04 Process for producing photoconductive member from gaseous silicon compounds
DE19823209055 DE3209055A1 (en) 1981-03-12 1982-03-12 METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060153A JPS57174448A (en) 1981-04-21 1981-04-21 Production of photoconductive member

Publications (2)

Publication Number Publication Date
JPS57174448A true JPS57174448A (en) 1982-10-27
JPS6145705B2 JPS6145705B2 (en) 1986-10-09

Family

ID=13133915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060153A Granted JPS57174448A (en) 1981-03-12 1981-04-21 Production of photoconductive member

Country Status (1)

Country Link
JP (1) JPS57174448A (en)

Also Published As

Publication number Publication date
JPS6145705B2 (en) 1986-10-09

Similar Documents

Publication Publication Date Title
US5910342A (en) Process for forming deposition film
ES8705929A1 (en) Gas mixtures and processes for deposition of amorphous semiconductors.
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS6451618A (en) Microcrystalline silicon carbide semiconductor film and manufacture thereof
CN86108693A (en) Thin-film transistor
EP0386727A1 (en) Method for producing single crystal diamond film
JPS5529155A (en) Semiconductor device
JPS57174448A (en) Production of photoconductive member
DE3702242A1 (en) METHOD FOR PRODUCING ADHESIVE IC LAYERS
JPS57174450A (en) Production of photoconductive member
JPS57174449A (en) Production of photoconductive member
JPS57174451A (en) Production of photoconductive member
JPS57152464A (en) Manufacture of photoconductive member
JPS57174452A (en) Production of photoconductive member
EP0806495A3 (en) Metal-organic chemical vapor-phase deposition process
JPS57152462A (en) Manufacture of photoconductive member
JPS5680128A (en) Manufacture of thin film
JPS56137790A (en) Speaker constitution body
JPS62226158A (en) Electrophotographic sensitive body
JPS57152463A (en) Manufacture of photoconductive member
JPS57147638A (en) Production of photoconductive member
JP2726676B2 (en) Formation method of silicon carbide microcrystalline thin film
JP2659400B2 (en) Formation method of carbon-containing silicon thin film
JPS5595318A (en) Production of amorphous film
JPS5755698A (en) Manufacture of acoustic vibrating material