JPS57152464A - Manufacture of photoconductive member - Google Patents
Manufacture of photoconductive memberInfo
- Publication number
- JPS57152464A JPS57152464A JP56037442A JP3744281A JPS57152464A JP S57152464 A JPS57152464 A JP S57152464A JP 56037442 A JP56037442 A JP 56037442A JP 3744281 A JP3744281 A JP 3744281A JP S57152464 A JPS57152464 A JP S57152464A
- Authority
- JP
- Japan
- Prior art keywords
- compounds
- photoconductive
- photoconductive layer
- mixed
- halogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To easily obtain a photoconductive member with superior electric, optical and photoconductive characteristics by introducing mixed gaseous starting material prepared by selecting specified silanes and halogen-contg. Si compounds and mixing them when a photoconductive layer is formed on a support. CONSTITUTION:Starting material for fomring a photoconductive layer is composed of compounds A represented by SinH2n+2, e.g., SiH4 and Si2H6 and of compounds B represented by SimHlXk (where l+k=2m+2, l is 0 or an ingeger, and X is halogen), e.g., Si2F6 and Si2Cl6. The starting compounds A, B are mixed so as to adjust the percentage of the compound of higher order of (m) to the compound of the lowest order of (n) or (m) to >=1vol%, and the mixture is introduced into a deposition chamber in the gaseous state. Glow discharge, arc discharge or other discharge is then caused in the mixed gaseous atmosphere to form a photoconductive layer on a support.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56037442A JPS57152464A (en) | 1981-03-16 | 1981-03-16 | Manufacture of photoconductive member |
| US06/354,898 US4468443A (en) | 1981-03-12 | 1982-03-04 | Process for producing photoconductive member from gaseous silicon compounds |
| DE19823209055 DE3209055A1 (en) | 1981-03-12 | 1982-03-12 | METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56037442A JPS57152464A (en) | 1981-03-16 | 1981-03-16 | Manufacture of photoconductive member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57152464A true JPS57152464A (en) | 1982-09-20 |
| JPS6331552B2 JPS6331552B2 (en) | 1988-06-24 |
Family
ID=12497619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56037442A Granted JPS57152464A (en) | 1981-03-12 | 1981-03-16 | Manufacture of photoconductive member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57152464A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57174450A (en) * | 1981-04-21 | 1982-10-27 | Canon Inc | Production of photoconductive member |
| JPS59127647A (en) * | 1983-01-11 | 1984-07-23 | Mitsui Toatsu Chem Inc | Manufacturing method of amorphous thin film |
| JPS59179151A (en) * | 1983-03-30 | 1984-10-11 | Mitsui Toatsu Chem Inc | Production of amorphous thin film |
| JPS6068050A (en) * | 1983-08-19 | 1985-04-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Deposition method using new composition by selective light excitation |
-
1981
- 1981-03-16 JP JP56037442A patent/JPS57152464A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57174450A (en) * | 1981-04-21 | 1982-10-27 | Canon Inc | Production of photoconductive member |
| JPS6325069B2 (en) * | 1981-04-21 | 1988-05-24 | Canon Kk | |
| JPS59127647A (en) * | 1983-01-11 | 1984-07-23 | Mitsui Toatsu Chem Inc | Manufacturing method of amorphous thin film |
| JPS59179151A (en) * | 1983-03-30 | 1984-10-11 | Mitsui Toatsu Chem Inc | Production of amorphous thin film |
| JPS6068050A (en) * | 1983-08-19 | 1985-04-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Deposition method using new composition by selective light excitation |
| JPH06339627A (en) * | 1983-08-19 | 1994-12-13 | Energy Conversion Devices Inc | Method for depositing semiconductor material on substrate and for producing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6331552B2 (en) | 1988-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5767020A (en) | Thin silicon film and its manufacture | |
| JPS5587444A (en) | Method of forming insulating film on semiconductor surface | |
| JPS57167631A (en) | Plasma vapor-phase growing method | |
| JPS57152464A (en) | Manufacture of photoconductive member | |
| JPS5728322A (en) | Formation of semiconductor single crystal layer | |
| JPS57152462A (en) | Manufacture of photoconductive member | |
| JPS57152463A (en) | Manufacture of photoconductive member | |
| JPS5683746A (en) | Electrophotographic image forming member | |
| JPS57149464A (en) | Production of photoconductive member | |
| JPS5664346A (en) | Electrophotographic receptor and its preparation | |
| ES8505623A1 (en) | Method of manufacturing optical wave guides. | |
| JPS57174449A (en) | Production of photoconductive member | |
| JPS57174450A (en) | Production of photoconductive member | |
| JPS5527612A (en) | Silicon base | |
| JPS57174452A (en) | Production of photoconductive member | |
| JPS5680128A (en) | Manufacture of thin film | |
| JPS57147638A (en) | Production of photoconductive member | |
| JPS5713661A (en) | Fluorescent lamp | |
| JPS6463296A (en) | Membrane el element | |
| JPS5595318A (en) | Production of amorphous film | |
| JPS5553415A (en) | Selective epitaxial growing | |
| JPS5419663A (en) | Forming method of insulating films | |
| KR840000980A (en) | Manufacturing Method of Semiconductor Film | |
| JPS57174451A (en) | Production of photoconductive member | |
| JPS53125760A (en) | Manufacture for gas discharging panel |