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JPS57172790A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57172790A
JPS57172790A JP56058190A JP5819081A JPS57172790A JP S57172790 A JPS57172790 A JP S57172790A JP 56058190 A JP56058190 A JP 56058190A JP 5819081 A JP5819081 A JP 5819081A JP S57172790 A JPS57172790 A JP S57172790A
Authority
JP
Japan
Prior art keywords
type
region
layer
gaalas
adjoining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56058190A
Other languages
Japanese (ja)
Inventor
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56058190A priority Critical patent/JPS57172790A/en
Publication of JPS57172790A publication Critical patent/JPS57172790A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To permit the stabilization of frequency and modulation by a method wherein the second P type region is provided by adjoining and contacting to the laser light path in an N type semiconductor region composing a laser device and penetrating a path and electrically insulating from the first P type region and reverse bias is applied to a P-N junction generated by the second P type region to control refractive index. CONSTITUTION:An N type GaAs layer 2, N type GaAlAs layer 3 are stacked and grown on an N type GaAlAs substrate 1. And the central section in the longitudinal direction of these stacked bodies is inverted to the first P type region consisting of a P type GaAlAs layer 4, P type GaAs layer 5, and P type GaAlAs layer 6 by the diffusion of a P type impurity. Next, the second P type region 11 is formed by diffusion in the layer 3 by adjoining to a laser light path generated by these regions to install an electrode 12 for modulation on the surface of the region 11 and a depletion layer 13 expanding from the region 11 is expanded in the layer 2 by applying reverse bias to a P-N junction caused by the region 11.
JP56058190A 1981-04-16 1981-04-16 Semiconductor laser device Pending JPS57172790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56058190A JPS57172790A (en) 1981-04-16 1981-04-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56058190A JPS57172790A (en) 1981-04-16 1981-04-16 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57172790A true JPS57172790A (en) 1982-10-23

Family

ID=13077096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56058190A Pending JPS57172790A (en) 1981-04-16 1981-04-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57172790A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183587A (en) * 1986-02-07 1987-08-11 Fujitsu Ltd Semiconductor laser
US5260960A (en) * 1991-07-26 1993-11-09 Siemens Aktiengesellschaft Tunable semiconductor laser on a semi-insulating substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507487A (en) * 1973-05-18 1975-01-25
JPS54113289A (en) * 1978-02-23 1979-09-04 Mitsubishi Electric Corp Semiconductor luminous device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507487A (en) * 1973-05-18 1975-01-25
JPS54113289A (en) * 1978-02-23 1979-09-04 Mitsubishi Electric Corp Semiconductor luminous device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183587A (en) * 1986-02-07 1987-08-11 Fujitsu Ltd Semiconductor laser
US5260960A (en) * 1991-07-26 1993-11-09 Siemens Aktiengesellschaft Tunable semiconductor laser on a semi-insulating substrate

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