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JPS5735392A - Semiconductor light source with photodetector to monitor - Google Patents

Semiconductor light source with photodetector to monitor

Info

Publication number
JPS5735392A
JPS5735392A JP11031880A JP11031880A JPS5735392A JP S5735392 A JPS5735392 A JP S5735392A JP 11031880 A JP11031880 A JP 11031880A JP 11031880 A JP11031880 A JP 11031880A JP S5735392 A JPS5735392 A JP S5735392A
Authority
JP
Japan
Prior art keywords
photodetector
crystal layer
light
source
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11031880A
Other languages
Japanese (ja)
Inventor
Masayoshi Umeno
Shiro Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP11031880A priority Critical patent/JPS5735392A/en
Publication of JPS5735392A publication Critical patent/JPS5735392A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve coupling efficiency between a source of light and a photodetector and to enhance monitoring efficiency of the photodetector of a semicoductor light source with photodetector to monitor by a method wherein two P-N junctions to act as the source of light and the photodetector are integrated in the direction of thickness. CONSTITUTION:N type InP thin film crystal layers 4, 8, a P type InP thin film crystal layer 6 and InGaAsP thin film crystal layers 5, 7 are made to grow in order on an InP substrate 9 using the epitaxial growth technique to form a wafer consisted of a quanternary crystal of InGaAsP. After a part of the wafer is removed by etching up to the InP crystal layer 6, electrodes 1, 2, 3 are formed respectively at both ends of the wafer and on the surface of the InP crystal layer 6. At this time, band gap energy of the crystal layer 5 is set larger than that of the crystal layer 7. Radiation from the crystal layer 5 making the P-N junction between the electrodes 1, 3 as the source of light is made to be absorbed in the crystal layer 7, and a photo current is made to flow between the electrodes 2 3 to perform monitoring of the source of light. Accordingly because the effective light receiving area of the photodetector is expanded and the distance between the source of light is reduced, coupling efficiency of both can be improved to enable to enhance monitoring efficiency of the photodetector.
JP11031880A 1980-08-13 1980-08-13 Semiconductor light source with photodetector to monitor Pending JPS5735392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11031880A JPS5735392A (en) 1980-08-13 1980-08-13 Semiconductor light source with photodetector to monitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11031880A JPS5735392A (en) 1980-08-13 1980-08-13 Semiconductor light source with photodetector to monitor

Publications (1)

Publication Number Publication Date
JPS5735392A true JPS5735392A (en) 1982-02-25

Family

ID=14532673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11031880A Pending JPS5735392A (en) 1980-08-13 1980-08-13 Semiconductor light source with photodetector to monitor

Country Status (1)

Country Link
JP (1) JPS5735392A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199583A (en) * 1982-05-15 1983-11-19 Masayoshi Umeno Multiple wavelength semiconductor laser
JPS6380590A (en) * 1986-09-24 1988-04-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser with optical output monitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199583A (en) * 1982-05-15 1983-11-19 Masayoshi Umeno Multiple wavelength semiconductor laser
JPS6380590A (en) * 1986-09-24 1988-04-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser with optical output monitor

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