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JPS57170890A - Growing method for single crystal - Google Patents

Growing method for single crystal

Info

Publication number
JPS57170890A
JPS57170890A JP5652481A JP5652481A JPS57170890A JP S57170890 A JPS57170890 A JP S57170890A JP 5652481 A JP5652481 A JP 5652481A JP 5652481 A JP5652481 A JP 5652481A JP S57170890 A JPS57170890 A JP S57170890A
Authority
JP
Japan
Prior art keywords
melt
compound
crystal
magnetic flux
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5652481A
Other languages
Japanese (ja)
Other versions
JPS6033797B2 (en
Inventor
Shinichi Hasegawa
Katsunobu Maeda
Yoshinobu Tsujikawa
Haruo Masai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP5652481A priority Critical patent/JPS6033797B2/en
Publication of JPS57170890A publication Critical patent/JPS57170890A/en
Publication of JPS6033797B2 publication Critical patent/JPS6033797B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To enhance the yield of a single crystal and the crystallinity when a single crystal of a semiconductor compound with a specified value or below of specific resistance is grown from a melt of the compound, by putting a specified range of the melt in a magnetic flux having a specified direction to hinder the convection of the melt.
CONSTITUTION: When a single crystal 3 of a semiconductor compound with ≤102Ω.cm specific resistance is grown from a melt 4 of the compound in a quartz boat 1 with a seed crystal 2, a convection 5 and a heat current 6 are pruoduced, so the melt 4 is put in a magnetic flux which is substantially perpendicular and parallel to the growing direction of the crystal 3 within 30mm from the interface between the crystal 3 and the melt 4. At this time, by supplying an electric current in the growing direction of the crystal 3 or the reverse direction, the convection of the melt in the vicinity of said solid-liq. interface can be hindered at a remarkably low magnetic flux density. When the compound has ≥102Ω.cm specific resistance, it is made difficult to supply the current, and the interaction between the compound and the magnetic field is reduced to require a very high magnetic flux density.
COPYRIGHT: (C)1982,JPO&Japio
JP5652481A 1981-04-15 1981-04-15 How to grow single crystals Expired JPS6033797B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5652481A JPS6033797B2 (en) 1981-04-15 1981-04-15 How to grow single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5652481A JPS6033797B2 (en) 1981-04-15 1981-04-15 How to grow single crystals

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7594084A Division JPS59213698A (en) 1984-04-16 1984-04-16 How to grow single crystals

Publications (2)

Publication Number Publication Date
JPS57170890A true JPS57170890A (en) 1982-10-21
JPS6033797B2 JPS6033797B2 (en) 1985-08-05

Family

ID=13029496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5652481A Expired JPS6033797B2 (en) 1981-04-15 1981-04-15 How to grow single crystals

Country Status (1)

Country Link
JP (1) JPS6033797B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036392A (en) * 1983-08-05 1985-02-25 Toshiba Corp Apparatus for pulling single crystal
JPS60221392A (en) * 1984-04-16 1985-11-06 Toshiba Corp Device for forming single crystal
JPS6144797A (en) * 1984-08-10 1986-03-04 Toshiba Corp Apparatus for growing single crystal and method for controlling same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105154978B (en) * 2015-10-14 2017-12-15 云南鑫耀半导体材料有限公司 Gallium arsenide polycrystal magnetic field growth furnace and growing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036392A (en) * 1983-08-05 1985-02-25 Toshiba Corp Apparatus for pulling single crystal
JPS60221392A (en) * 1984-04-16 1985-11-06 Toshiba Corp Device for forming single crystal
JPS6144797A (en) * 1984-08-10 1986-03-04 Toshiba Corp Apparatus for growing single crystal and method for controlling same

Also Published As

Publication number Publication date
JPS6033797B2 (en) 1985-08-05

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