JPS57118086A - Manufacture of single crystal - Google Patents
Manufacture of single crystalInfo
- Publication number
- JPS57118086A JPS57118086A JP17140180A JP17140180A JPS57118086A JP S57118086 A JPS57118086 A JP S57118086A JP 17140180 A JP17140180 A JP 17140180A JP 17140180 A JP17140180 A JP 17140180A JP S57118086 A JPS57118086 A JP S57118086A
- Authority
- JP
- Japan
- Prior art keywords
- flux
- magnetic field
- crucible
- single crystal
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To manufacture a high grade single crystal of a compound semiconductor contg. no inclusion of a flux component by applying a magnetic field to the flux component in a crucible from the outside.
CONSTITUTION: A quartz container 3 provided with a crucible 1 packed with a compound 13, a metallic flux 12 and seed crystal 14 and a crucible 2 feeding the 2nd component as a gas is put in a heating furnace 4 and heated to melt the flux 12, and while applying a magnetic field to the whole crucible 1 from a magnetic field generator 5 set around the upper part of the furnace 4, a single crystal 11 of a compound semiconductor is grown. The magnetic field can inhibit the molten metallic flux from being fluidized by a temp. change, and the flux component is prevented from entering the crystal growing interface. Thus, a homogeneous single crystal is grown.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17140180A JPS57118086A (en) | 1980-12-04 | 1980-12-04 | Manufacture of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17140180A JPS57118086A (en) | 1980-12-04 | 1980-12-04 | Manufacture of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57118086A true JPS57118086A (en) | 1982-07-22 |
Family
ID=15922464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17140180A Pending JPS57118086A (en) | 1980-12-04 | 1980-12-04 | Manufacture of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57118086A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270378A (en) * | 1987-04-28 | 1988-11-08 | Furukawa Electric Co Ltd:The | Production of single crystal of compound semiconductor |
| JPS63274684A (en) * | 1987-05-06 | 1988-11-11 | Furukawa Electric Co Ltd:The | Production of compound semiconductor single crystal |
| JPS63285183A (en) * | 1987-05-18 | 1988-11-22 | Furukawa Electric Co Ltd:The | Production of compound semiconductor single crystal |
| CN111472047A (en) * | 2020-05-15 | 2020-07-31 | 广东先导稀材股份有限公司 | A kind of indium phosphide crystal and its growth method |
-
1980
- 1980-12-04 JP JP17140180A patent/JPS57118086A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270378A (en) * | 1987-04-28 | 1988-11-08 | Furukawa Electric Co Ltd:The | Production of single crystal of compound semiconductor |
| JPS63274684A (en) * | 1987-05-06 | 1988-11-11 | Furukawa Electric Co Ltd:The | Production of compound semiconductor single crystal |
| JPS63285183A (en) * | 1987-05-18 | 1988-11-22 | Furukawa Electric Co Ltd:The | Production of compound semiconductor single crystal |
| CN111472047A (en) * | 2020-05-15 | 2020-07-31 | 广东先导稀材股份有限公司 | A kind of indium phosphide crystal and its growth method |
| CN111472047B (en) * | 2020-05-15 | 2021-08-17 | 广东先导稀材股份有限公司 | A kind of indium phosphide crystal and its growth method |
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