[go: up one dir, main page]

JPS57155366A - Apparatus for manufacturing semiconductor - Google Patents

Apparatus for manufacturing semiconductor

Info

Publication number
JPS57155366A
JPS57155366A JP3941881A JP3941881A JPS57155366A JP S57155366 A JPS57155366 A JP S57155366A JP 3941881 A JP3941881 A JP 3941881A JP 3941881 A JP3941881 A JP 3941881A JP S57155366 A JPS57155366 A JP S57155366A
Authority
JP
Japan
Prior art keywords
container
semiconductor wafer
metal source
flow
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3941881A
Other languages
Japanese (ja)
Inventor
Toshifumi Takeda
Hideo Sakai
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3941881A priority Critical patent/JPS57155366A/en
Publication of JPS57155366A publication Critical patent/JPS57155366A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a uniform metal thin film on a semiconductor wafer, by controlling a flow of a heavy metal source adjacent to a flow control member in a container so as to mix the metal source with a reactant gas. CONSTITUTION:A semiconductor wafer 20 is placed on a susceptor 18 in the container 10, and is rotated together with the susceptor 18 by a rotating shaft 16. In this state, while the container 10 is evacuated from an evacuation port 14, a metal source for forming a metal thin film is introduced through a metal source introduction port 16 at the top of the container 10 into the container 10. The flow control member 24 having a cone shape provided on the top of the rotating shaft 16 controls the flow of the metal source by the side of the cone and guides the flow onto the semiconductor wafer 20. On the other hand, a reactant gas is allowed to flow up in the hollow rotating shaft 16, is jetted via a plurality of jet holes 22 provided in the top thereof into the container 10, is guided by the bottom surface of the cone of the control member 24, and is mixed with the metal source over the semiconductor wafer 20 so that a uniform metal thin film is formed on the semiconductor wafer 20.
JP3941881A 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor Pending JPS57155366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3941881A JPS57155366A (en) 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3941881A JPS57155366A (en) 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor

Publications (1)

Publication Number Publication Date
JPS57155366A true JPS57155366A (en) 1982-09-25

Family

ID=12552430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3941881A Pending JPS57155366A (en) 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor

Country Status (1)

Country Link
JP (1) JPS57155366A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5664504A (en) * 1994-10-27 1997-09-09 Kobayashi; Shizuo Combustion apparatus having inverse temperature distribution by forced convection
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5664504A (en) * 1994-10-27 1997-09-09 Kobayashi; Shizuo Combustion apparatus having inverse temperature distribution by forced convection
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor

Similar Documents

Publication Publication Date Title
US4033286A (en) Chemical vapor deposition reactor
EP0335421A3 (en) Semiconductor manufacturing apparatus
JPS55154582A (en) Gas plasma etching method
JPH0517696B2 (en)
JP2000031251A (en) Wafer rack with gas distribution device
JPS57155366A (en) Apparatus for manufacturing semiconductor
JPS57128940A (en) Heat treating method for substrate
JPS62123721A (en) processing equipment
JP3359474B2 (en) Horizontal heat treatment equipment
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS6484717A (en) Semiconductor thin film vapor growth apparatus
JPS56138921A (en) Method of formation for impurity introduction layer
JPS5754328A (en) Decompressed vapor-phase growing device
JPS5618426A (en) Manufacture of semiconductor device
JPS54111771A (en) Gas phase reaction unit of semiconductor substrate
JPS55110030A (en) Method for vapor growth
JPS6425539A (en) Wet treating apparatus
JPS55124232A (en) Application method of substrate treatment solution and the device therefor
JPH10144617A (en) Thermal treatment furnace
JPH02177424A (en) Chemical vapor growth device
JPS5764924A (en) Jig for heat treatment of semiconductor wafer
JPS6413721A (en) Formation of thin film
JPS6490521A (en) Cvd system
JPS5972721A (en) Vapor phase growth device
JPS5544869A (en) Discharging method of raw material of polyurethane foam