JPS57148356A - Sample holding device - Google Patents
Sample holding deviceInfo
- Publication number
- JPS57148356A JPS57148356A JP3260481A JP3260481A JPS57148356A JP S57148356 A JPS57148356 A JP S57148356A JP 3260481 A JP3260481 A JP 3260481A JP 3260481 A JP3260481 A JP 3260481A JP S57148356 A JPS57148356 A JP S57148356A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- sample
- omega
- electrode
- volume resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 229920002678 cellulose Polymers 0.000 abstract 1
- 239000001913 cellulose Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
Abstract
PURPOSE:To enable to perform steady attraction at a low application voltage of several hundred volts as well as to eliminate the dielectric breakdown of a sample by a method wherein, when the sample is electrostatically attracted to the supporting member consisting of a semiconductive dielectric, the dielectric is composed of cellulose carbon or graphite wherein the volume resistivity of the dielectric is formed at 10<4>-10<8>OMEGA/cm. CONSTITUTION:An attracting stand, consisting of a semiconductive dielectric (b) which electrostatically attracts a conductive sample (a), is formed by the material consisting of the cellulosic carbon, pyrolytic graphite and the like, volume resistivity of which is prescribed at 10<4>-10<8>OMEGA/cm. Then, an electrode (c) is coated on the back of the dielectric (b), and the sample (a) is electrostatically attracted on the surface of the dielectric (b) by applying voltage to the sample (a) and the electrode (c). Accordingly, the electrostatic attraction force of several kg/cm<2> can be obtained by applying a low voltage of several hundred volts, and also the dielectric breakdown phenomenon of the sample, which is the intrinsic defect of an electrostatic chuck, can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3260481A JPS57148356A (en) | 1981-03-09 | 1981-03-09 | Sample holding device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3260481A JPS57148356A (en) | 1981-03-09 | 1981-03-09 | Sample holding device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57148356A true JPS57148356A (en) | 1982-09-13 |
JPS6114660B2 JPS6114660B2 (en) | 1986-04-19 |
Family
ID=12363457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3260481A Granted JPS57148356A (en) | 1981-03-09 | 1981-03-09 | Sample holding device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57148356A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59124140A (en) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | Electrostatic adsorbing device |
JPS59152636A (en) * | 1983-02-21 | 1984-08-31 | Toshiba Corp | Static chucking device |
JPS59181622A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Manufacture of semiconductor device |
US4884026A (en) * | 1987-06-24 | 1989-11-28 | Tokyo Electron Limited | Electrical characteristic measuring apparatus |
JPH033250A (en) * | 1989-05-30 | 1991-01-09 | Ulvac Corp | Substrate holder |
JPH04277648A (en) * | 1991-01-31 | 1992-10-02 | Internatl Business Mach Corp <Ibm> | Electrostatic chuck coated with diamond |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63307065A (en) * | 1987-05-29 | 1988-12-14 | Matsushita Electric Ind Co Ltd | Part arranged strip |
JPH01254571A (en) * | 1988-03-24 | 1989-10-11 | Nippon Dempa Kogyo Co Ltd | embossed tape |
-
1981
- 1981-03-09 JP JP3260481A patent/JPS57148356A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59124140A (en) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | Electrostatic adsorbing device |
JPS59152636A (en) * | 1983-02-21 | 1984-08-31 | Toshiba Corp | Static chucking device |
JPS6245698B2 (en) * | 1983-02-21 | 1987-09-28 | Tokyo Shibaura Electric Co | |
JPS59181622A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Manufacture of semiconductor device |
US4884026A (en) * | 1987-06-24 | 1989-11-28 | Tokyo Electron Limited | Electrical characteristic measuring apparatus |
JPH033250A (en) * | 1989-05-30 | 1991-01-09 | Ulvac Corp | Substrate holder |
JPH04277648A (en) * | 1991-01-31 | 1992-10-02 | Internatl Business Mach Corp <Ibm> | Electrostatic chuck coated with diamond |
Also Published As
Publication number | Publication date |
---|---|
JPS6114660B2 (en) | 1986-04-19 |
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