JPS57134963A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS57134963A JPS57134963A JP56021296A JP2129681A JPS57134963A JP S57134963 A JPS57134963 A JP S57134963A JP 56021296 A JP56021296 A JP 56021296A JP 2129681 A JP2129681 A JP 2129681A JP S57134963 A JPS57134963 A JP S57134963A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- al2o3
- memory
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a memory device of high speed and high integrity by a method wherein source and drain regions are formed by using an Al gate electrode as a mask and Al2O3 film is formed on the electrode surface and a memory-capacitor electrode is formed close to the Al2O3 film. CONSTITUTION:An Al electrode 14 is formed on a semiconductor substrate 11 which has field insulation film 12 via SiO2 film 13. After impurity regions 15 and 16 are formed by implanting As ions using the Al electrode as a mask, Al2O3 layer 17 is formed on the gate electrode 14 by plasma oxidization. Then a memory-capacitor electrode 18 of polycrystalline Si is formed and Al electrode-wiring 20 is formed. With this constitution, as both of word-line and bit- line are composed of Al, high speed can be obtained and, as separating insulation film is composed of self-oxidized film, high integrity can be obtained.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56021296A JPS57134963A (en) | 1981-02-16 | 1981-02-16 | Semiconductor memory |
| DE8282300741T DE3272410D1 (en) | 1981-02-16 | 1982-02-15 | Method of producing mosfet type semiconductor device |
| EP82300741A EP0058548B1 (en) | 1981-02-16 | 1982-02-15 | Method of producing mosfet type semiconductor device |
| US06/722,741 US4646426A (en) | 1981-02-16 | 1985-04-08 | Method of producing MOS FET type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56021296A JPS57134963A (en) | 1981-02-16 | 1981-02-16 | Semiconductor memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57134963A true JPS57134963A (en) | 1982-08-20 |
Family
ID=12051173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56021296A Pending JPS57134963A (en) | 1981-02-16 | 1981-02-16 | Semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57134963A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242382A (en) * | 1975-09-29 | 1977-04-01 | Ibm | Method of forming isolated pocket in semiconductor material |
| JPH0586287A (en) * | 1991-09-26 | 1993-04-06 | Mitsubishi Kasei Corp | Polyamide resin composition |
-
1981
- 1981-02-16 JP JP56021296A patent/JPS57134963A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242382A (en) * | 1975-09-29 | 1977-04-01 | Ibm | Method of forming isolated pocket in semiconductor material |
| JPH0586287A (en) * | 1991-09-26 | 1993-04-06 | Mitsubishi Kasei Corp | Polyamide resin composition |
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