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JPS5712559A - Junction type field effect semiconductor device - Google Patents

Junction type field effect semiconductor device

Info

Publication number
JPS5712559A
JPS5712559A JP8661680A JP8661680A JPS5712559A JP S5712559 A JPS5712559 A JP S5712559A JP 8661680 A JP8661680 A JP 8661680A JP 8661680 A JP8661680 A JP 8661680A JP S5712559 A JPS5712559 A JP S5712559A
Authority
JP
Japan
Prior art keywords
area
type
regions
source
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8661680A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Shigeo Otaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8661680A priority Critical patent/JPS5712559A/en
Publication of JPS5712559A publication Critical patent/JPS5712559A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a J-FET having high efficiency of effective area and a high withstand voltage by a method wherein gate layers are arranged in a mesh type making the area of drain regions (or source regions) larger than the area of the source regions (or the drain regions). CONSTITUTION:The P type gate layers 3 are arranged in the mesh type arranging a narrow interval d1 and a broad interval d2 alternately, and the area d2Xd2 of the drain region D is made as larger than the area d1Xd2 of the source region S. Consequently the withstand voltage of the drain regions can be enlarged, and efficiency of effective area in a chip can be increased without increasing the area of the chip. Moreover to utilize crossing parts A of the narrow gate layers at the interval d1, N<+> type connecting layers 5 are provided to provide source electrodes, or P<+> type layers reaching a P type substrate are provided at the A parts to be connected to the gate of substrate, and reduction of gate resistance is attained. Source wirings 7, drain wirings 8 of Al are provided in the diagonal direction interposing an insulating film between them to be connected to the respective regions.
JP8661680A 1980-06-27 1980-06-27 Junction type field effect semiconductor device Pending JPS5712559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8661680A JPS5712559A (en) 1980-06-27 1980-06-27 Junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8661680A JPS5712559A (en) 1980-06-27 1980-06-27 Junction type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5712559A true JPS5712559A (en) 1982-01-22

Family

ID=13891948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8661680A Pending JPS5712559A (en) 1980-06-27 1980-06-27 Junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712559A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038392A (en) * 2003-05-15 2009-02-19 Panasonic Corp Semiconductor device
CN108091575A (en) * 2017-12-21 2018-05-29 深圳市晶特智造科技有限公司 Junction field effect transistor and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038392A (en) * 2003-05-15 2009-02-19 Panasonic Corp Semiconductor device
CN108091575A (en) * 2017-12-21 2018-05-29 深圳市晶特智造科技有限公司 Junction field effect transistor and preparation method thereof

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