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JPS5753151A - And circuit - Google Patents

And circuit

Info

Publication number
JPS5753151A
JPS5753151A JP55128193A JP12819380A JPS5753151A JP S5753151 A JPS5753151 A JP S5753151A JP 55128193 A JP55128193 A JP 55128193A JP 12819380 A JP12819380 A JP 12819380A JP S5753151 A JPS5753151 A JP S5753151A
Authority
JP
Japan
Prior art keywords
region
semiconductor region
gate electrodes
crystal silicon
active element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55128193A
Other languages
Japanese (ja)
Inventor
Eiichi Sano
Yasuhisa Omura
Kuniki Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55128193A priority Critical patent/JPS5753151A/en
Publication of JPS5753151A publication Critical patent/JPS5753151A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel

Landscapes

  • Logic Circuits (AREA)

Abstract

PURPOSE:To obtain a logical operation circuit whose occupying area is small one a semiconductor substrate, by providing active elements, which have plural gate electrodes through insulating layers, in the common semiconductor region. CONSTITUTION:An active element Q has a semiconductor region 1 of N<+> single- crystal silicon, a semiconductor region 2 of N<-> single-crystal silicon connected to the region 1 and a semiconductor region 3 of P<+> single-crystal silicon which forms a P-N junction 4 with the region 2, and the active element Q has plural gate electrodes G1-GN, which face to one another through an insulating layer 5 and extend in parallel with the direction connecting regions 1 and 3, in the region 2. Plural input signal sources A1-AN are connected between gate electrodes G1-GN and the semiconductor region 3, respectively, and an output terminal 6 is led out from the middle point of connection between the active element Q and a load L.
JP55128193A 1980-09-16 1980-09-16 And circuit Pending JPS5753151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55128193A JPS5753151A (en) 1980-09-16 1980-09-16 And circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128193A JPS5753151A (en) 1980-09-16 1980-09-16 And circuit

Publications (1)

Publication Number Publication Date
JPS5753151A true JPS5753151A (en) 1982-03-30

Family

ID=14978746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55128193A Pending JPS5753151A (en) 1980-09-16 1980-09-16 And circuit

Country Status (1)

Country Link
JP (1) JPS5753151A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128965A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device
EP0577998A2 (en) * 1992-06-12 1994-01-12 Yozan Inc. Field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128965A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device
EP0577998A2 (en) * 1992-06-12 1994-01-12 Yozan Inc. Field effect transistor
EP0577998A3 (en) * 1992-06-12 1994-02-16 Yozan Inc

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