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JPS6457668A - Charge coupled device - Google Patents

Charge coupled device

Info

Publication number
JPS6457668A
JPS6457668A JP21393487A JP21393487A JPS6457668A JP S6457668 A JPS6457668 A JP S6457668A JP 21393487 A JP21393487 A JP 21393487A JP 21393487 A JP21393487 A JP 21393487A JP S6457668 A JPS6457668 A JP S6457668A
Authority
JP
Japan
Prior art keywords
final
transfer
electrode
transfer electrodes
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21393487A
Other languages
Japanese (ja)
Other versions
JP2606225B2 (en
Inventor
Tokuo Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62213934A priority Critical patent/JP2606225B2/en
Publication of JPS6457668A publication Critical patent/JPS6457668A/en
Application granted granted Critical
Publication of JP2606225B2 publication Critical patent/JP2606225B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make it possible to increase the operating frequency of the title charge coupled device by a method wherein the final transfer electrode located adjacent to the output gate of the final stage of a final electrode is formed at least larger than the area of the transfer electrode. CONSTITUTION:The first conductivity type semiconductor substrate 11, a number of transfer electrodes 16-18, and 30 provided on one main surface of said semiconductor substrate 11 through the intermediary of an insulating film 14, a means with which potential wells ere formed under said transfer electrodes 16-18 and 30 and also signal charge is accumulated or shifted, an input device with which signal charge is inputted into said potential wells, and an output device with which signal charge is detected are provided. In this kind of charge- coupled element, the final transfer electrode 30 located adjacent to the output gate 20 on the final stage of the above-mentioned transfer electrodes 16-18 and 30 is made at least larger than the area of the other transfer electrodes 16-18. As a result, the potential located directly under the output gate can be made large without making small the dynamic range of the final stage transfer electrode, and the operating frequency characteristics of a CCD can be improved.
JP62213934A 1987-08-27 1987-08-27 Charge-coupled device Expired - Lifetime JP2606225B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62213934A JP2606225B2 (en) 1987-08-27 1987-08-27 Charge-coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213934A JP2606225B2 (en) 1987-08-27 1987-08-27 Charge-coupled device

Publications (2)

Publication Number Publication Date
JPS6457668A true JPS6457668A (en) 1989-03-03
JP2606225B2 JP2606225B2 (en) 1997-04-30

Family

ID=16647466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213934A Expired - Lifetime JP2606225B2 (en) 1987-08-27 1987-08-27 Charge-coupled device

Country Status (1)

Country Link
JP (1) JP2606225B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04352578A (en) * 1991-05-30 1992-12-07 Sanyo Electric Co Ltd Charge transfer element
KR20010003830A (en) * 1999-06-25 2001-01-15 김영환 Solid state image pickup device and method of fabricating the same
JP2018085402A (en) * 2016-11-22 2018-05-31 ソニー株式会社 Image pick-up device, stacked image pick-up device and solid state imaging device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175A (en) * 1981-06-05 1983-01-05 エヌ・ベー・フイリップス・フルーイランペンファブリケン semiconductor equipment
JPS6414966A (en) * 1987-07-08 1989-01-19 Nec Corp Charge transfer device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175A (en) * 1981-06-05 1983-01-05 エヌ・ベー・フイリップス・フルーイランペンファブリケン semiconductor equipment
JPS6414966A (en) * 1987-07-08 1989-01-19 Nec Corp Charge transfer device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04352578A (en) * 1991-05-30 1992-12-07 Sanyo Electric Co Ltd Charge transfer element
KR20010003830A (en) * 1999-06-25 2001-01-15 김영환 Solid state image pickup device and method of fabricating the same
JP2018085402A (en) * 2016-11-22 2018-05-31 ソニー株式会社 Image pick-up device, stacked image pick-up device and solid state imaging device
US11222912B2 (en) 2016-11-22 2022-01-11 Sony Corporation Imaging element, stacked type imaging element and solid-state imaging apparatus
US11901382B2 (en) 2016-11-22 2024-02-13 Sony Group Corporation Imaging element, stacked-type imaging element and solid-state imaging apparatus

Also Published As

Publication number Publication date
JP2606225B2 (en) 1997-04-30

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