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JPS57106181A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS57106181A
JPS57106181A JP18215180A JP18215180A JPS57106181A JP S57106181 A JPS57106181 A JP S57106181A JP 18215180 A JP18215180 A JP 18215180A JP 18215180 A JP18215180 A JP 18215180A JP S57106181 A JPS57106181 A JP S57106181A
Authority
JP
Japan
Prior art keywords
integrated circuit
sections
dimensional integrated
shaped
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18215180A
Other languages
Japanese (ja)
Inventor
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP18215180A priority Critical patent/JPS57106181A/en
Publication of JPS57106181A publication Critical patent/JPS57106181A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To form a polyfunctional integrated circuit element having extra high density by a method wherein a two-dimensional integrated circuit layer containing an active element is shaped, the integrated circuit layers are laminated in a multilayer through insulating layers to form a three-dimensional integrated circuit, and each integrated circuit is connected by optical signals. CONSTITUTION:The active elements such as inverter circuits consisting of MOS transistors (TR) T1 and T2 are formed onto a substrate through the manufacture of a conventional two-dimensional integrated circuit, and sections among the first layer insulating isolation film 20 is shaped onto the substrate, and sections among layers are isolated. A plural kind of semiconductor thin-films are formed. An Si crystalline film 21 shaping a TR T3 and a GaAlAs film 24 molding a light emitting diode D1 are formed, and used as the first laminated element. The process is repeated successively, and a multilayer element region is shaped.A light receiving diode D2 is molded to an N layer, and the sections among each circuit are coupled by the optical signals. Accordingly, the polyfunctional three-dimensional integrated circuit element having extra-high density is formed.
JP18215180A 1980-12-24 1980-12-24 Integrated circuit Pending JPS57106181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18215180A JPS57106181A (en) 1980-12-24 1980-12-24 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18215180A JPS57106181A (en) 1980-12-24 1980-12-24 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS57106181A true JPS57106181A (en) 1982-07-01

Family

ID=16113244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18215180A Pending JPS57106181A (en) 1980-12-24 1980-12-24 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS57106181A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832453A (en) * 1981-08-21 1983-02-25 Hitachi Ltd Electronic circuit components using light
JPS5950583A (en) * 1982-09-16 1984-03-23 Fujitsu Ltd Semiconductor device
JPS60218867A (en) * 1984-04-13 1985-11-01 Fuji Electric Corp Res & Dev Ltd Compound element
JPS613450A (en) * 1984-06-18 1986-01-09 Hiroshima Daigaku Three-dimensional optically coupled shared memory integration device
JPS61160959A (en) * 1985-01-10 1986-07-21 Hitachi Ltd Multilayer structure semiconductor device
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5258320A (en) * 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5280184A (en) * 1992-04-08 1994-01-18 Georgia Tech Research Corporation Three dimensional integrated circuits with lift-off
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5401983A (en) * 1992-04-08 1995-03-28 Georgia Tech Research Corporation Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5610094A (en) * 1986-07-11 1997-03-11 Canon Kabushiki Kaisha Photoelectric conversion device
JP2651509B2 (en) * 1990-06-29 1997-09-10 フォトニック インテグレイション リサーチ，インコーポレイテッド Optoelectronic device having optical waveguide on metallized substrate and method of forming the optical waveguide
US5757445A (en) * 1990-12-31 1998-05-26 Kopin Corporation Single crystal silicon tiles for display panels
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
JP2008182209A (en) * 2006-12-27 2008-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus using the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS=1963 *

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832453A (en) * 1981-08-21 1983-02-25 Hitachi Ltd Electronic circuit components using light
JPS5950583A (en) * 1982-09-16 1984-03-23 Fujitsu Ltd Semiconductor device
JPS60218867A (en) * 1984-04-13 1985-11-01 Fuji Electric Corp Res & Dev Ltd Compound element
JPS613450A (en) * 1984-06-18 1986-01-09 Hiroshima Daigaku Three-dimensional optically coupled shared memory integration device
JPS61160959A (en) * 1985-01-10 1986-07-21 Hitachi Ltd Multilayer structure semiconductor device
US5610094A (en) * 1986-07-11 1997-03-11 Canon Kabushiki Kaisha Photoelectric conversion device
JP2651509B2 (en) * 1990-06-29 1997-09-10 フォトニック インテグレイション リサーチ，インコーポレイテッド Optoelectronic device having optical waveguide on metallized substrate and method of forming the optical waveguide
US6414783B2 (en) 1990-12-31 2002-07-02 Kopin Corporation Method of transferring semiconductors
US6486929B1 (en) 1990-12-31 2002-11-26 Kopin Corporation Bonded layer semiconductor device
US6919935B2 (en) 1990-12-31 2005-07-19 Kopin Corporation Method of forming an active matrix display
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5377031A (en) * 1990-12-31 1994-12-27 Kopin Corporation Single crystal silicon tiles for liquid crystal display panels including light shielding layers
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US6521940B1 (en) 1990-12-31 2003-02-18 Kopin Corporation High density electronic circuit modules
US5258320A (en) * 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5539550A (en) * 1990-12-31 1996-07-23 Kopin Corporation Liquid crystal display having adhered circuit tiles
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5702963A (en) * 1990-12-31 1997-12-30 Kopin Corporation Method of forming high density electronic circuit modules
US5757445A (en) * 1990-12-31 1998-05-26 Kopin Corporation Single crystal silicon tiles for display panels
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US6232136B1 (en) 1990-12-31 2001-05-15 Kopin Corporation Method of transferring semiconductors
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US6424020B1 (en) 1990-12-31 2002-07-23 Kopin Corporation High Density electronic circuit modules
US5453405A (en) * 1991-01-18 1995-09-26 Kopin Corporation Method of making light emitting diode bars and arrays
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5401983A (en) * 1992-04-08 1995-03-28 Georgia Tech Research Corporation Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices
US5280184A (en) * 1992-04-08 1994-01-18 Georgia Tech Research Corporation Three dimensional integrated circuits with lift-off
JP2008182209A (en) * 2006-12-27 2008-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus using the same
JP2014187395A (en) * 2006-12-27 2014-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus
JP2016085222A (en) * 2006-12-27 2016-05-19 株式会社半導体エネルギー研究所 Semiconductor device

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