JPS5694664A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS5694664A JPS5694664A JP16917979A JP16917979A JPS5694664A JP S5694664 A JPS5694664 A JP S5694664A JP 16917979 A JP16917979 A JP 16917979A JP 16917979 A JP16917979 A JP 16917979A JP S5694664 A JPS5694664 A JP S5694664A
- Authority
- JP
- Japan
- Prior art keywords
- current
- load
- transistor
- region
- small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To reduce the area of a circuit composed of a load and a transistor by inserting a high pressure-resisting small-current driving semiconductor element in between the high pressure resisting small-current load and the small-current transistor which switches the current flowing to the load. CONSTITUTION:To the high pressure-resisting small-current load 13 provided between a potential VH of negative polarity and an earthing potential is connected the small-current transistor 22 in which a current controlling signal Vin for switching the current to the load is inputted, whereby a circuit for driving high voltage ranging up to several hundreds voltage is constituted. In this constitution, in order that the area of the circuit may be reduced so as to make the same fitted for IC, the following semiconductor element 21 is inserted in between the load 13 and the transistor 22. That is, a diode composed of a P<+> type region 32 surrounded by a P<+> type region 33 which, in its turn, is surrounded by a P<-> type guard ring area 33 and another diode composed of a P<+> type region 34 contacting with the end part of the region 33 are formed on an N type semiconductor substrate 31. The region 32 of the element 21 thus formed is connected with the load 13, while the region 34 is connected with the transistor 22, and thereby it is made unnecessary to make the transistor 22 highly resisting to pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16917979A JPS5694664A (en) | 1979-12-27 | 1979-12-27 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16917979A JPS5694664A (en) | 1979-12-27 | 1979-12-27 | Semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5694664A true JPS5694664A (en) | 1981-07-31 |
| JPS6245705B2 JPS6245705B2 (en) | 1987-09-28 |
Family
ID=15881703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16917979A Granted JPS5694664A (en) | 1979-12-27 | 1979-12-27 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5694664A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010765A (en) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | Semiconductor device |
| JPS6064461A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Semiconductor device |
| CN104952911A (en) * | 2015-06-11 | 2015-09-30 | 江苏东晨电子科技有限公司 | Annular PN junction |
-
1979
- 1979-12-27 JP JP16917979A patent/JPS5694664A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010765A (en) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | Semiconductor device |
| JPH0348663B2 (en) * | 1983-06-30 | 1991-07-25 | Fujitsu Ltd | |
| JPS6064461A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Semiconductor device |
| CN104952911A (en) * | 2015-06-11 | 2015-09-30 | 江苏东晨电子科技有限公司 | Annular PN junction |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6245705B2 (en) | 1987-09-28 |
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