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JPS5693355A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5693355A
JPS5693355A JP17003779A JP17003779A JPS5693355A JP S5693355 A JPS5693355 A JP S5693355A JP 17003779 A JP17003779 A JP 17003779A JP 17003779 A JP17003779 A JP 17003779A JP S5693355 A JPS5693355 A JP S5693355A
Authority
JP
Japan
Prior art keywords
layer
collector
type
collector resistor
cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17003779A
Other languages
Japanese (ja)
Inventor
Miki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17003779A priority Critical patent/JPS5693355A/en
Publication of JPS5693355A publication Critical patent/JPS5693355A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make the device small by a method wherein a longitudinal-type collector resistor surrounded by a cylindrical p-layer is formed in an N type collector layer on a P type Si substrate. CONSTITUTION:An N+ buried layer 11 is formed on the P type Si substrate 10 and an N-epitaxial layer 12 is piled thereon. If necessary, a poly-Si 5' is allowed to selectively be formed on the part where the collector resistor is formed, after the formation of the layer 11. Then, the n-epitaxial layer 12 is separated by the P-layer 13 to form the cylindrical P-layer 4. As the bar-shape N eptiaxial layer inside the cylinder is used as the collector resistor, the layer 4 must be formed taking enough its diffusion in transverse direction into consideration. Then the P-layer 4 comes in touch with the buried layer 11, there arises no great difference in the value of a resist element to be formed. Subsequently, a P-base 14, an N emitter 15 are formed, an N- resist connection layer 16 is provided and electrodes 1-3 are attached to finish. With the contact of the P-layers 4 and 14, the device can be made smaller, or the diode by the P-layer 4 and the N-collector layer 12 can also be connected in parallel with the collector resistor 5, and only one collector electrode 3 is enough to be provided on a chip surface, thereby enabling the device to be made very small.
JP17003779A 1979-12-26 1979-12-26 Semiconductor device Pending JPS5693355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17003779A JPS5693355A (en) 1979-12-26 1979-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17003779A JPS5693355A (en) 1979-12-26 1979-12-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5693355A true JPS5693355A (en) 1981-07-28

Family

ID=15897430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17003779A Pending JPS5693355A (en) 1979-12-26 1979-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5693355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921814A (en) * 1987-12-28 1990-05-01 Mitsubishi Denki Kabushiki Kaisha Method of producing an MMIC

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921814A (en) * 1987-12-28 1990-05-01 Mitsubishi Denki Kabushiki Kaisha Method of producing an MMIC

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