[go: up one dir, main page]

JPS5688359A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5688359A
JPS5688359A JP16550079A JP16550079A JPS5688359A JP S5688359 A JPS5688359 A JP S5688359A JP 16550079 A JP16550079 A JP 16550079A JP 16550079 A JP16550079 A JP 16550079A JP S5688359 A JPS5688359 A JP S5688359A
Authority
JP
Japan
Prior art keywords
layer
alloy
covered
electrode
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16550079A
Other languages
Japanese (ja)
Inventor
Keiji Kobayashi
Hirofumi Motohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16550079A priority Critical patent/JPS5688359A/en
Publication of JPS5688359A publication Critical patent/JPS5688359A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an electrode not becoming inoperative even under high temperature and high moisture by forming a Ti-Pd alloy or Ti-V alloy layer and noble metal layer defined in composition and thickness on an electrode wiring metallic layer when using material containing aluminum as main ingredient for the metallic layer. CONSTITUTION:An SiO2 film 16 is covered on an Si substrate 11, a window is opened thereat, an aluminum layer 12 is extended on the film 16 to contact with the substrate 11, an SiO2 film 17 is covered on the entire surface, a window is again opened while being disposed on the layer 12, and a prescribed electrode is mounted on the layer 12. Ti-Pd alloy containing 0.01-5% of Pd or Ti-V alloy containing 0.01-10% of V is employed for the metallic material covered on the exposed layer 12 in this configuration, and the thickness is specified to 1,000-3,000Angstrom . Further, an Au layer 15 is formed through a Pt layer 14 thereon as a laminated electrode structure. Thus, the reliability of the device cannot be lowered even if it is allowed to stand at approx. 80 deg.C and approx. 90% of humidity for.
JP16550079A 1979-12-21 1979-12-21 Semiconductor device and manufacture thereof Pending JPS5688359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16550079A JPS5688359A (en) 1979-12-21 1979-12-21 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16550079A JPS5688359A (en) 1979-12-21 1979-12-21 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5688359A true JPS5688359A (en) 1981-07-17

Family

ID=15813566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16550079A Pending JPS5688359A (en) 1979-12-21 1979-12-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5688359A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193149A (en) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193149A (en) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5688359A (en) Semiconductor device and manufacture thereof
GB1469008A (en) Electrical relay devices
JPS5618463A (en) Manufacture of semiconductor device
JPS55113334A (en) Manufacture of passivation film
JPS5441673A (en) Semiconductor device and its manufacture
JPS5662382A (en) Hall element
US3229235A (en) Thermal radiant energy detecting device
JPS55130133A (en) Semiconductor device
EP0360159A3 (en) Method of producing thick-film gas sensor element having improved stability
JPS54111760A (en) Electrode construction for semiconductor device
FR2265243A1 (en) Radiation heating element for e.g. cooking - has thin metal heating circuit on a thin insulating layer
JPS57154041A (en) Gas detecting element
JPS5690569A (en) Photoelectric transducer
JPS54162463A (en) Semiconductor device and its manufacture
JPS55158549A (en) Production of sensor
JPS5696875A (en) Semiconductor pressure sensing device and manufacture thereof
JPS5710446A (en) Gas detecting element
JPS539489A (en) Production of semiconductor device
JPS5796573A (en) Semiconductor strain transducer
JPS57103333A (en) Manufacture of semiconductor device
JPS5578224A (en) Temperature sensor
JPS565882A (en) Production of electrochromic display
JPS56118656A (en) Thick-membrane type gas detecting element
JPS5582456A (en) Semiconductor device
JPS55122142A (en) Carbon monoxide detector