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JPS5690569A - Photoelectric transducer - Google Patents

Photoelectric transducer

Info

Publication number
JPS5690569A
JPS5690569A JP16789879A JP16789879A JPS5690569A JP S5690569 A JPS5690569 A JP S5690569A JP 16789879 A JP16789879 A JP 16789879A JP 16789879 A JP16789879 A JP 16789879A JP S5690569 A JPS5690569 A JP S5690569A
Authority
JP
Japan
Prior art keywords
electrode
film
light
si3n4
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16789879A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP16789879A priority Critical patent/JPS5690569A/en
Publication of JPS5690569A publication Critical patent/JPS5690569A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To make MIS or shotkey type electrode, decrease a membrane resistance and get a superior degree of light permeability degree by a method wherein a metal having a clear work function and a transparent electrode for preventing a reflection are overlapped on a semiconductor or through an insulation film or a semi-insulation film. CONSTITUTION:Ohm type electrode 3 is attacned to a rear surface of Si layer 1 of a monocrystal or multicrystal etc., and Si3N4 or Si3N4-x (0<x<3) film 6 is arranged at a light radiating plane to mask such a thickness as allowing a tunnel current therein. Then, as a semitransparent electrode 2, Pt or Au is selected because it has a sufficiently high work function as compared to that of a semiconductor, hard to be oxidized and it may be coated. Further, on the top or upper surface is applied some oxide substance of In, Sn, Sb as a transparent electrode and in particular a film thickness of 1,500Angstrom may cause a sufficient effect for preventing a reflection of light. With this arrangement, the sheet resistance is decreased to about 1/10, a positive hole is sufficiently pulled out up to an opposing electrode, so that an efficiency of photoelectric transducer may become about twice of that of a conventional device, 10-15%.
JP16789879A 1979-12-24 1979-12-24 Photoelectric transducer Pending JPS5690569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16789879A JPS5690569A (en) 1979-12-24 1979-12-24 Photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16789879A JPS5690569A (en) 1979-12-24 1979-12-24 Photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5690569A true JPS5690569A (en) 1981-07-22

Family

ID=15858095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16789879A Pending JPS5690569A (en) 1979-12-24 1979-12-24 Photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5690569A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637085A1 (en) * 1989-08-30 1995-02-01 Texas Instruments Incorporated Infrared detector and imager
JP2009218394A (en) * 2008-03-11 2009-09-24 Seiko Epson Corp Solar cell and its manufacturing method
JP2014027001A (en) * 2012-07-24 2014-02-06 Toyota Gakuen Photoelectric conversion element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637085A1 (en) * 1989-08-30 1995-02-01 Texas Instruments Incorporated Infrared detector and imager
JP2009218394A (en) * 2008-03-11 2009-09-24 Seiko Epson Corp Solar cell and its manufacturing method
JP2014027001A (en) * 2012-07-24 2014-02-06 Toyota Gakuen Photoelectric conversion element

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