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JPS5655067A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5655067A
JPS5655067A JP13148379A JP13148379A JPS5655067A JP S5655067 A JPS5655067 A JP S5655067A JP 13148379 A JP13148379 A JP 13148379A JP 13148379 A JP13148379 A JP 13148379A JP S5655067 A JPS5655067 A JP S5655067A
Authority
JP
Japan
Prior art keywords
pad
chip
back surface
adhered
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13148379A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13148379A priority Critical patent/JPS5655067A/en
Publication of JPS5655067A publication Critical patent/JPS5655067A/en
Pending legal-status Critical Current

Links

Classifications

    • H10W70/611—
    • H10W70/635—
    • H10W72/07551—
    • H10W72/50—
    • H10W72/884—
    • H10W72/932—
    • H10W72/942—
    • H10W72/944—
    • H10W90/722—
    • H10W90/732—
    • H10W90/736—
    • H10W90/752—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To readily wire a multichip package by fixedly connecting a plurality of chips with an electrode leading pad connected to both front and back surface of a substrate through a penetrating conductive layer therebetween. CONSTITUTION:An aluminum penetrating diffused layer 54 is, for example, formed in a substrate 51, and insulating film 55, integrated circuit 56, an electrode pickup pad 57 and a protecting film 58 are formed sequentially thereon. Further, an insulating film 55' and an electrode leading pad 57' are formed on the back surface of the substrate 51, and the pads 57 and 57' are conducted with aluminum and silicon eutectic crystal P type high density diffused layer. Such chips 51, 51a and 51b are formed in a laminate architecture, the back surface pad 57' of the chip 51 and the surface pad 57a of the chip 51a are adhered with solder bump 60, the back surface pad 57a' of the chip 51 and the surface pad 57b of the chip 51b are adhered with solder bump 61, and the back surface pad 57b' of the chip 51b and the external lead 62 of the package are adhered with solder bump 63.
JP13148379A 1979-10-11 1979-10-11 Semiconductor integrated circuit device Pending JPS5655067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13148379A JPS5655067A (en) 1979-10-11 1979-10-11 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13148379A JPS5655067A (en) 1979-10-11 1979-10-11 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5655067A true JPS5655067A (en) 1981-05-15

Family

ID=15059027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13148379A Pending JPS5655067A (en) 1979-10-11 1979-10-11 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5655067A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890766A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Semiconductor device of multi-layer structure
JPS59134989A (en) * 1982-09-08 1984-08-02 テキサス・インスツルメンツ・インコ−ポレイテツド Focus surface array of image sensor, semiconductor device and method of producing same
JPS6118164A (en) * 1984-07-04 1986-01-27 Mitsubishi Electric Corp Semiconductor device
JPS61500393A (en) * 1983-11-07 1986-03-06 ア−ビン・センサ−ズ・コ−ポレ−シヨン Light/detector array module and its manufacturing method
US4819056A (en) * 1986-07-03 1989-04-04 Delco Electronics Corporation Hybrid thick film circuit device
US5422435A (en) * 1992-05-22 1995-06-06 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
US6252305B1 (en) * 2000-02-29 2001-06-26 Advanced Semiconductor Engineering, Inc. Multichip module having a stacked chip arrangement
US6526191B1 (en) 1998-02-26 2003-02-25 Micron Technology, Inc. Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same
US6777715B1 (en) 1998-02-26 2004-08-17 Micron Technology, Inc. Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same
WO2005086216A1 (en) * 2004-03-09 2005-09-15 Japan Science And Technology Agency Semiconductor element and semiconductor element manufacturing method
JP2006173615A (en) * 2004-12-13 2006-06-29 Agere Systems Inc Integrated circuit with stacked die type configuration utilizing substrate conduction
EP1713122A3 (en) * 1999-10-19 2006-11-02 Fujitsu Limited Semiconductor device and method for producing the same
JP2009260373A (en) * 2009-07-27 2009-11-05 Fujitsu Microelectronics Ltd Semiconductor device, its method for manufacturing, and semiconductor substrate

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890766A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Semiconductor device of multi-layer structure
JPS59134989A (en) * 1982-09-08 1984-08-02 テキサス・インスツルメンツ・インコ−ポレイテツド Focus surface array of image sensor, semiconductor device and method of producing same
JPS61500393A (en) * 1983-11-07 1986-03-06 ア−ビン・センサ−ズ・コ−ポレ−シヨン Light/detector array module and its manufacturing method
JPS6118164A (en) * 1984-07-04 1986-01-27 Mitsubishi Electric Corp Semiconductor device
US4819056A (en) * 1986-07-03 1989-04-04 Delco Electronics Corporation Hybrid thick film circuit device
US5422435A (en) * 1992-05-22 1995-06-06 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
US5495398A (en) * 1992-05-22 1996-02-27 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
US5502289A (en) * 1992-05-22 1996-03-26 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
US6723577B1 (en) 1998-02-26 2004-04-20 Micron Technology, Inc. Method of forming an optical fiber interconnect through a semiconductor wafer
US7164156B2 (en) 1998-02-26 2007-01-16 Micron Technology, Inc. Electronic systems using optical waveguide interconnects formed throught a semiconductor wafer
US6777715B1 (en) 1998-02-26 2004-08-17 Micron Technology, Inc. Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same
US7547954B2 (en) 1998-02-26 2009-06-16 Micron Technology, Inc. Electronic systems using optical waveguide interconnects formed through a semiconductor wafer
US6995443B2 (en) 1998-02-26 2006-02-07 Micron Technology, Inc. Integrated circuits using optical fiber interconnects formed through a semiconductor wafer
US6995441B2 (en) * 1998-02-26 2006-02-07 Micron Technology, Inc. Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same
US6526191B1 (en) 1998-02-26 2003-02-25 Micron Technology, Inc. Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same
EP1713122A3 (en) * 1999-10-19 2006-11-02 Fujitsu Limited Semiconductor device and method for producing the same
US6252305B1 (en) * 2000-02-29 2001-06-26 Advanced Semiconductor Engineering, Inc. Multichip module having a stacked chip arrangement
JPWO2005086216A1 (en) * 2004-03-09 2008-01-24 独立行政法人科学技術振興機構 Semiconductor element and method of manufacturing semiconductor element
WO2005086216A1 (en) * 2004-03-09 2005-09-15 Japan Science And Technology Agency Semiconductor element and semiconductor element manufacturing method
JP2006173615A (en) * 2004-12-13 2006-06-29 Agere Systems Inc Integrated circuit with stacked die type configuration utilizing substrate conduction
JP2013033981A (en) * 2004-12-13 2013-02-14 Agere Systems Inc Integrated circuit having configuration of stacked die type using substrate continuity
JP2009260373A (en) * 2009-07-27 2009-11-05 Fujitsu Microelectronics Ltd Semiconductor device, its method for manufacturing, and semiconductor substrate

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