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JPS5731166A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5731166A
JPS5731166A JP10591180A JP10591180A JPS5731166A JP S5731166 A JPS5731166 A JP S5731166A JP 10591180 A JP10591180 A JP 10591180A JP 10591180 A JP10591180 A JP 10591180A JP S5731166 A JPS5731166 A JP S5731166A
Authority
JP
Japan
Prior art keywords
chips
pads
multilayer
package
inner pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10591180A
Other languages
Japanese (ja)
Other versions
JPS6355213B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10591180A priority Critical patent/JPS5731166A/en
Publication of JPS5731166A publication Critical patent/JPS5731166A/en
Publication of JPS6355213B2 publication Critical patent/JPS6355213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To provide a compact and high capacity semiconductor device, by a method wherein IC chips laminated into multilayer are housed in a package which has inner pads placed in a shape of steps and the inner pads are connected to the corresponding outer conducting pads of the chips. CONSTITUTION:IC chips 1a-1d are piled and fixed with adhesive material 3 such as insulating resin, conductive resin or soldering material on the stage 5 of a package 4. The required connecting pads 2a, 2b, 2c of the chips and inner pads 6a, 6b, 6c of the multilayer constructed package 4 are connected with wires 7. The surface of each chips is protected by an insulating film 9. The required connecting pad 2d of the chip 1d at the top stage and the required pad 2c of the chip 1c of the lower stage are connected with a wire 7'. The inner pads 6a-6c of the package and corresponding pads 2a-2c of the multilayer IC chips 1a-1d are to be placed on almost a same level. Thus the yield of the multilayer IC production is improved and the compact and high capacity devices are provided.
JP10591180A 1980-07-31 1980-07-31 Semiconductor device Granted JPS5731166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10591180A JPS5731166A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10591180A JPS5731166A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5731166A true JPS5731166A (en) 1982-02-19
JPS6355213B2 JPS6355213B2 (en) 1988-11-01

Family

ID=14420041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10591180A Granted JPS5731166A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731166A (en)

Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283634A (en) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp Semiconductor device
US4866932A (en) * 1987-11-09 1989-09-19 Shin Caterpillar Mitsubishi Ltd. Apparatus for treating particulate emission from diesel engine
JPH0287635A (en) * 1988-09-26 1990-03-28 Nec Corp Ceramic package semiconductor device
US4956695A (en) * 1989-05-12 1990-09-11 Rockwell International Corporation Three-dimensional packaging of focal plane assemblies using ceramic spacers
WO1992003035A1 (en) * 1990-08-01 1992-02-20 Staktek Corporation Ultra high density integrated circuit packages, method and apparatus
US5239447A (en) * 1991-09-13 1993-08-24 International Business Machines Corporation Stepped electronic device package
US5369056A (en) * 1993-03-29 1994-11-29 Staktek Corporation Warp-resistent ultra-thin integrated circuit package fabrication method
US5367766A (en) * 1990-08-01 1994-11-29 Staktek Corporation Ultra high density integrated circuit packages method
US5377077A (en) * 1990-08-01 1994-12-27 Staktek Corporation Ultra high density integrated circuit packages method and apparatus
US5446620A (en) * 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
US5448450A (en) * 1991-08-15 1995-09-05 Staktek Corporation Lead-on-chip integrated circuit apparatus
US5475920A (en) * 1990-08-01 1995-12-19 Burns; Carmen D. Method of assembling ultra high density integrated circuit packages
US5484959A (en) * 1992-12-11 1996-01-16 Staktek Corporation High density lead-on-package fabrication method and apparatus
US5572065A (en) * 1992-06-26 1996-11-05 Staktek Corporation Hermetically sealed ceramic integrated circuit heat dissipating package
US5585668A (en) * 1995-01-30 1996-12-17 Staktek Corporation Integrated circuit package with overlapped die on a common lead frame
US5588205A (en) * 1995-01-24 1996-12-31 Staktek Corporation Method of manufacturing a high density integrated circuit module having complex electrical interconnect rails
US5600183A (en) * 1994-11-15 1997-02-04 Hughes Electronics Multi-layer film adhesive for electrically isolating and grounding an integrated circuit chip to a printed circuit substrate
US5644161A (en) * 1993-03-29 1997-07-01 Staktek Corporation Ultra-high density warp-resistant memory module
US5783464A (en) * 1992-06-26 1998-07-21 Staktek Corporation Method of forming a hermetically sealed circuit lead-on package
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