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JPS5643752A - Mos memory cell - Google Patents

Mos memory cell

Info

Publication number
JPS5643752A
JPS5643752A JP11952179A JP11952179A JPS5643752A JP S5643752 A JPS5643752 A JP S5643752A JP 11952179 A JP11952179 A JP 11952179A JP 11952179 A JP11952179 A JP 11952179A JP S5643752 A JPS5643752 A JP S5643752A
Authority
JP
Japan
Prior art keywords
region
alpha rays
transistor
informations
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11952179A
Other languages
Japanese (ja)
Other versions
JPS617754B2 (en
Inventor
Natsuo Tsubouchi
Masahiko Denda
Katsuhiro Hirata
Shigeji Kinoshita
Hiroji Harada
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11952179A priority Critical patent/JPS5643752A/en
Publication of JPS5643752A publication Critical patent/JPS5643752A/en
Publication of JPS617754B2 publication Critical patent/JPS617754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To decrease false operation due to alpha rays by a method wherein a means is mounted by which electrons or holes generated in a silicon substrate due to alpha rays cannot reach to a capacitor region. CONSTITUTION:Memorized informations are written into the capacitor region 2 in such a manner that voltage corresponding to the contents of the writing-in is given to an n<+> type silicon region 8, a transistor region 3 is conducted by driving the second polysilicon layer 7 forming the gate of the transistor region 3 and the informations are written into the capacitor region 2, and the gate of the transistor 3 is grounded and broken. Electrons or holes generated due to alpha rays are interrupted by a silicon oxide film 10.
JP11952179A 1979-09-17 1979-09-17 Mos memory cell Granted JPS5643752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11952179A JPS5643752A (en) 1979-09-17 1979-09-17 Mos memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11952179A JPS5643752A (en) 1979-09-17 1979-09-17 Mos memory cell

Publications (2)

Publication Number Publication Date
JPS5643752A true JPS5643752A (en) 1981-04-22
JPS617754B2 JPS617754B2 (en) 1986-03-08

Family

ID=14763324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11952179A Granted JPS5643752A (en) 1979-09-17 1979-09-17 Mos memory cell

Country Status (1)

Country Link
JP (1) JPS5643752A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation

Also Published As

Publication number Publication date
JPS617754B2 (en) 1986-03-08

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