JPS5642347A - Passivation of surface of compound semiconductor - Google Patents
Passivation of surface of compound semiconductorInfo
- Publication number
- JPS5642347A JPS5642347A JP11735679A JP11735679A JPS5642347A JP S5642347 A JPS5642347 A JP S5642347A JP 11735679 A JP11735679 A JP 11735679A JP 11735679 A JP11735679 A JP 11735679A JP S5642347 A JPS5642347 A JP S5642347A
- Authority
- JP
- Japan
- Prior art keywords
- light
- intensity
- compound semiconductor
- laser light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 238000002161 passivation Methods 0.000 title 1
- 230000000694 effects Effects 0.000 abstract 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11735679A JPS5642347A (en) | 1979-09-14 | 1979-09-14 | Passivation of surface of compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11735679A JPS5642347A (en) | 1979-09-14 | 1979-09-14 | Passivation of surface of compound semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5642347A true JPS5642347A (en) | 1981-04-20 |
Family
ID=14709651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11735679A Pending JPS5642347A (en) | 1979-09-14 | 1979-09-14 | Passivation of surface of compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5642347A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948977A (ja) * | 1982-09-14 | 1984-03-21 | Nec Corp | レ−ザダイオ−ドの製造方法 |
CN115841969A (zh) * | 2022-12-12 | 2023-03-24 | 江苏宜兴德融科技有限公司 | 一种半导体器件激光钝化设备及钝化方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421172A (en) * | 1977-07-18 | 1979-02-17 | Nec Corp | Manufacture for semiconductor device |
-
1979
- 1979-09-14 JP JP11735679A patent/JPS5642347A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421172A (en) * | 1977-07-18 | 1979-02-17 | Nec Corp | Manufacture for semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948977A (ja) * | 1982-09-14 | 1984-03-21 | Nec Corp | レ−ザダイオ−ドの製造方法 |
CN115841969A (zh) * | 2022-12-12 | 2023-03-24 | 江苏宜兴德融科技有限公司 | 一种半导体器件激光钝化设备及钝化方法 |
CN115841969B (zh) * | 2022-12-12 | 2023-09-08 | 江苏宜兴德融科技有限公司 | 一种半导体器件激光钝化设备及钝化方法 |
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