JPS55145384A - Screening method of semiconductor laser diode - Google Patents
Screening method of semiconductor laser diodeInfo
- Publication number
- JPS55145384A JPS55145384A JP5250979A JP5250979A JPS55145384A JP S55145384 A JPS55145384 A JP S55145384A JP 5250979 A JP5250979 A JP 5250979A JP 5250979 A JP5250979 A JP 5250979A JP S55145384 A JPS55145384 A JP S55145384A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- diode
- laser diode
- current
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To remove the reflecting surface deteriorated of a semiconductor laser diode simply without rupture for short time by irradiating opaque emitting wavelength light externally to the active layer of the diode. CONSTITUTION:An AlGaAs-GaAs series double hetero junction laser is employed as a semiconductor laser diode, an Ar laser light is focused in intensity of 0.5kw/cm<2> by a lense and irradiated to the active layer 4 of a specimen 10 to measure the absorption current Ip by an ammeter 9 connected both terminals of the diode 10. The GaAs has very large absorption coefficient such as approx. 10<5>cm<-1> for the wavelength of the Ar laser. Since almost all light is absorbed within the vicinity of 0.1mum of the vicinity from the surface, the absorption current sensitively reflects the state in the vicinity of the reflecting surface. The lower the value of the current Ip, the faster the deterioration becomes. This is similar to the different wafer. Therefore, the screening of the semiconductor laser diode is conducted according to the value of the current Ip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5250979A JPS55145384A (en) | 1979-05-01 | 1979-05-01 | Screening method of semiconductor laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5250979A JPS55145384A (en) | 1979-05-01 | 1979-05-01 | Screening method of semiconductor laser diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55145384A true JPS55145384A (en) | 1980-11-12 |
| JPS6342435B2 JPS6342435B2 (en) | 1988-08-23 |
Family
ID=12916694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5250979A Granted JPS55145384A (en) | 1979-05-01 | 1979-05-01 | Screening method of semiconductor laser diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55145384A (en) |
-
1979
- 1979-05-01 JP JP5250979A patent/JPS55145384A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| JAPANESE JOURNAL OF APPLIED PHYSICS=1974 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6342435B2 (en) | 1988-08-23 |
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