[go: up one dir, main page]

JPS5635458A - Manufacture of integrated circuit device - Google Patents

Manufacture of integrated circuit device

Info

Publication number
JPS5635458A
JPS5635458A JP11089279A JP11089279A JPS5635458A JP S5635458 A JPS5635458 A JP S5635458A JP 11089279 A JP11089279 A JP 11089279A JP 11089279 A JP11089279 A JP 11089279A JP S5635458 A JPS5635458 A JP S5635458A
Authority
JP
Japan
Prior art keywords
selectively
type
diffused
masks
perforated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11089279A
Other languages
English (en)
Other versions
JPS6214103B2 (ja
Inventor
Masafumi Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP11089279A priority Critical patent/JPS5635458A/ja
Priority to GB8027685A priority patent/GB2057760B/en
Priority to US06/183,064 priority patent/US4449284A/en
Publication of JPS5635458A publication Critical patent/JPS5635458A/ja
Publication of JPS6214103B2 publication Critical patent/JPS6214103B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP11089279A 1979-08-30 1979-08-30 Manufacture of integrated circuit device Granted JPS5635458A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11089279A JPS5635458A (en) 1979-08-30 1979-08-30 Manufacture of integrated circuit device
GB8027685A GB2057760B (en) 1979-08-30 1980-08-27 Integrated circuit device and method of making the same
US06/183,064 US4449284A (en) 1979-08-30 1980-09-02 Method of manufacturing an integrated circuit device having vertical field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11089279A JPS5635458A (en) 1979-08-30 1979-08-30 Manufacture of integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5635458A true JPS5635458A (en) 1981-04-08
JPS6214103B2 JPS6214103B2 (ja) 1987-03-31

Family

ID=14547324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11089279A Granted JPS5635458A (en) 1979-08-30 1979-08-30 Manufacture of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5635458A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63135160A (ja) * 1986-11-27 1988-06-07 村井 政治 インプラント材植設用溝の穿設装置
JPS63216560A (ja) * 1987-03-06 1988-09-08 株式会社ニコン 顎骨穿孔用ガイド装置
JPS63315045A (ja) * 1987-06-19 1988-12-22 Nikon Corp 顎骨穿孔用ガイド装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235987A (en) * 1975-09-16 1977-03-18 Hitachi Ltd Semiconductor integrated circuit
JPS5492078A (en) * 1977-12-28 1979-07-20 Seiko Instr & Electronics Ltd Charge injection element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235987A (en) * 1975-09-16 1977-03-18 Hitachi Ltd Semiconductor integrated circuit
JPS5492078A (en) * 1977-12-28 1979-07-20 Seiko Instr & Electronics Ltd Charge injection element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63135160A (ja) * 1986-11-27 1988-06-07 村井 政治 インプラント材植設用溝の穿設装置
JPS63216560A (ja) * 1987-03-06 1988-09-08 株式会社ニコン 顎骨穿孔用ガイド装置
JPS63315045A (ja) * 1987-06-19 1988-12-22 Nikon Corp 顎骨穿孔用ガイド装置

Also Published As

Publication number Publication date
JPS6214103B2 (ja) 1987-03-31

Similar Documents

Publication Publication Date Title
JPS55160457A (en) Semiconductor device
JPS5635458A (en) Manufacture of integrated circuit device
JPS56126968A (en) Semiconductor device
JPS54142981A (en) Manufacture of insulation gate type semiconductor device
JPS5736842A (en) Semiconductor integrated circuit device
JPS57155769A (en) Manufacture of semiconductor device
JPS55154748A (en) Complementary mos semiconductor device
JPS6489359A (en) Manufacture of bipolar semiconductor integrated circuit device
JPS57204144A (en) Insulating and isolating method for semiconductor integrated circuit
JPS5483778A (en) Mos semiconductor device and its manufacture
JPS5583267A (en) Method of fabricating semiconductor device
JPS57134956A (en) Manufacture of semiconductor integrated circuit
JPS54153583A (en) Semiconductor device
JPS5736879A (en) Manufacture of semiconductor device
JPS57106076A (en) Manufacture of semiconductor integrated circuit device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS566448A (en) Mos type integrated circuit device
JPS57202756A (en) Manufacture of semiconductor device
JPS5737849A (en) Manufacture of semiconductor device
JPS5452475A (en) Field effect transistor of insulation gate type
JPS57122570A (en) Forming method for impurity region in semiconductor
JPS5791538A (en) Manufacture of semiconductor device
JPS6417443A (en) Manufacture of semiconductor device
JPS5796545A (en) Manufacture of integrated circuit
JPS57176764A (en) Manufacture of semiconductor device