[go: up one dir, main page]

JPS5629344A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS5629344A
JPS5629344A JP10575279A JP10575279A JPS5629344A JP S5629344 A JPS5629344 A JP S5629344A JP 10575279 A JP10575279 A JP 10575279A JP 10575279 A JP10575279 A JP 10575279A JP S5629344 A JPS5629344 A JP S5629344A
Authority
JP
Japan
Prior art keywords
oxide film
layer
type
polysilicon
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10575279A
Other languages
Japanese (ja)
Other versions
JPS5814072B2 (en
Inventor
Takao Yano
Shinichiro Yamada
Takeshi Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54105752A priority Critical patent/JPS5814072B2/en
Publication of JPS5629344A publication Critical patent/JPS5629344A/en
Publication of JPS5814072B2 publication Critical patent/JPS5814072B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high speed semiconductor integrated circuit having high density by connecting a high resistance polysilicon layer directly to the semiconductor region of an MISFET. CONSTITUTION:A field oxide film 6 and a gate oxide film 5 are formed on a P type Si substrate 1, and an opening 7 is perforated at the oxide film 5. Polysilicon layers 28, 30 are selectively formed on the openings 7 and the film 5, N type impurity is introduced to form layers 8', 10, 3 and 4. Subsequently, O<+> or the like is selectively introduced into the N type layer 8' to form a high resistance layer 8a and a low resistance layer 8b. Thereafter, the entire surface is coated with an oxide film 11, openings 12, 13 are selectively formed thereat to form electrodes 14, 15 thereon. This configuration forms a resistance element body made of polysilicon connected directly to the N type layer of an MISFET to thereafter obtain a resistance element merely by introducing impurity and substance for lowering the conductivity thereof so as to easily enhance the density and operating speed as an entire device.
JP54105752A 1979-08-20 1979-08-20 Semiconductor integrated circuit device and its manufacturing method Expired JPS5814072B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54105752A JPS5814072B2 (en) 1979-08-20 1979-08-20 Semiconductor integrated circuit device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54105752A JPS5814072B2 (en) 1979-08-20 1979-08-20 Semiconductor integrated circuit device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5629344A true JPS5629344A (en) 1981-03-24
JPS5814072B2 JPS5814072B2 (en) 1983-03-17

Family

ID=14415963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54105752A Expired JPS5814072B2 (en) 1979-08-20 1979-08-20 Semiconductor integrated circuit device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5814072B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030588A (en) * 1988-04-05 1991-07-09 Seiko Instruments Inc. Method of making semiconductor device with film resistor
US5236851A (en) * 1988-07-14 1993-08-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7172975B2 (en) 2019-01-16 2022-11-16 信越化学工業株式会社 Novel Onium Salt, Chemically Amplified Resist Composition, and Pattern Forming Method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128278A (en) * 1975-04-30 1976-11-09 Sony Corp Integrated circuit with resistance element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128278A (en) * 1975-04-30 1976-11-09 Sony Corp Integrated circuit with resistance element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030588A (en) * 1988-04-05 1991-07-09 Seiko Instruments Inc. Method of making semiconductor device with film resistor
US5236851A (en) * 1988-07-14 1993-08-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices

Also Published As

Publication number Publication date
JPS5814072B2 (en) 1983-03-17

Similar Documents

Publication Publication Date Title
JPS5688354A (en) Semiconductor integrated circuit device
JPS5629344A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5562771A (en) Integrated circuit device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS51128278A (en) Integrated circuit with resistance element
JPS56115557A (en) Manufacture of semiconductor device
JPS55157241A (en) Manufacture of semiconductor device
JPS54141585A (en) Semiconductor integrated circuit device
JPS5768075A (en) Manufacture of integrated circuit device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS54102883A (en) Manufacture for semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS5664460A (en) Semiconductor device
JPS54105979A (en) Semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5642372A (en) Manufacture of semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS566464A (en) Semiconductor device and manufacture thereof
JPS55108773A (en) Insulating gate type field effect transistor
JPS5283073A (en) Production of semiconductor device
JPS55143068A (en) Insulated gate semiconductor device
JPS5490981A (en) Semiconductor device
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS5562760A (en) Semiconductor device
JPS5629361A (en) Manufacture of semiconductor integrated circuit