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JPS5626433A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5626433A
JPS5626433A JP10305279A JP10305279A JPS5626433A JP S5626433 A JPS5626433 A JP S5626433A JP 10305279 A JP10305279 A JP 10305279A JP 10305279 A JP10305279 A JP 10305279A JP S5626433 A JPS5626433 A JP S5626433A
Authority
JP
Japan
Prior art keywords
layer
film
silver
forming
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10305279A
Other languages
Japanese (ja)
Other versions
JPS603772B2 (en
Inventor
Yoshihiko Mizushima
Akitsu Takeda
Akira Yoshikawa
Osamu Ochi
Tomoko Kuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54103052A priority Critical patent/JPS603772B2/en
Priority to US06/174,275 priority patent/US4350541A/en
Priority to FR8017774A priority patent/FR2463509B1/en
Priority to DE3030660A priority patent/DE3030660C2/en
Publication of JPS5626433A publication Critical patent/JPS5626433A/en
Publication of JPS603772B2 publication Critical patent/JPS603772B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To readily obtain a highly accurate device by forming a layer which contains a desired conductive type impurities and whose main component is Se on a semiconductor substrate, forming a pattern by an inorganic resist mask of silver and the like, forming a heat diffusing layer by covering with an SiO2 film and the like, and providing an electrode. CONSTITUTION:On an N type semiconductor substrate 1, are stacked a noncrystal chalcogenide layer 3 which contains P type impurities and whose component is Se70 Ge30 and a layer 4 comprising silver, silver chalcogenide, or halide, thereby a highly sensitive photoresist film 5 is formed. A highly accurate layer 7 is obtained by exposure and development, covered by SiO2 8 and the like, and a P type layer 9 is formed by heat treatment. If the material of the film 8 is adquately selled, all the layer 7 is resolved in to layer 8. A window 10 in opened in the layer 8, the remaining film 7 is etched out, and an electrode 11 is formed. In this constitution, the layer 7 is accurately formed; the impurities are not diffused to unnecessary outer portion by the layer 8, and diffused into the substrate effectively; thereby the P layer with desired concentration can be very accurately formed.
JP54103052A 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices Expired JPS603772B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP54103052A JPS603772B2 (en) 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices
US06/174,275 US4350541A (en) 1979-08-13 1980-07-31 Doping from a photoresist layer
FR8017774A FR2463509B1 (en) 1979-08-13 1980-08-12 PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES AND DEVICES OBTAINED THEREBY
DE3030660A DE3030660C2 (en) 1979-08-13 1980-08-13 Method for the selective diffusion of a dopant into a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54103052A JPS603772B2 (en) 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5626433A true JPS5626433A (en) 1981-03-14
JPS603772B2 JPS603772B2 (en) 1985-01-30

Family

ID=14343891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54103052A Expired JPS603772B2 (en) 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS603772B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04199507A (en) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp Solid phase diffusion of n-type impurity to iii-v compound semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934018A (en) * 1972-07-31 1974-03-29
JPS4952967A (en) * 1972-09-25 1974-05-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934018A (en) * 1972-07-31 1974-03-29
JPS4952967A (en) * 1972-09-25 1974-05-23

Also Published As

Publication number Publication date
JPS603772B2 (en) 1985-01-30

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