JPS5622942A - Diffraction grating and its manufacture - Google Patents
Diffraction grating and its manufactureInfo
- Publication number
- JPS5622942A JPS5622942A JP9813279A JP9813279A JPS5622942A JP S5622942 A JPS5622942 A JP S5622942A JP 9813279 A JP9813279 A JP 9813279A JP 9813279 A JP9813279 A JP 9813279A JP S5622942 A JPS5622942 A JP S5622942A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- diffraction grating
- rays
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- -1 CF3 ions Chemical class 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
PURPOSE: To manufacture a diffraction grating by which strong X-rays can be obtained by selectively removing an insulating film after forming the insulating film on a substrate that permits X-rays to pass through it and then by plating the exposed substrate surface with gold.
CONSTITUTION: After both the sides of Si single crystal substrate 1 of about 100μm are mirror-finished, SiO2 films 2 and 2' are produced by thermal oxidation, etc. Next, Ti is vapor-deposited on film 2 to form film 3, on which resist film 4 is further formed by using photoresist. Resist film 4 is exposed to electron beams, X- rays, etc., and developed to form resist film mask 4". Film 4" is used to pattern Ti film 3 by glow discharge of CF4 gas, forming mask 3". Next, film 2 is etched through reactive ion etching, etc., with CF3 ions to leave film 2". After films 4" and 3" are removed, substrate 1 is dipped in a solution of potassium gold cyanide as a cathode to plate the exposed surface of substrate 1 with gold 5. Thus, the diffraction grating is completed. Instead of striped patterning, coaxial-groove-shaped patterning realizes a diffraction grating of a Fresnel zone plate.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9813279A JPS5622942A (en) | 1979-08-02 | 1979-08-02 | Diffraction grating and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9813279A JPS5622942A (en) | 1979-08-02 | 1979-08-02 | Diffraction grating and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5622942A true JPS5622942A (en) | 1981-03-04 |
Family
ID=14211718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9813279A Pending JPS5622942A (en) | 1979-08-02 | 1979-08-02 | Diffraction grating and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5622942A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58162847A (en) * | 1982-03-23 | 1983-09-27 | Nec Corp | X-ray topography |
| US20110168908A1 (en) * | 2010-01-08 | 2011-07-14 | Canon Kabushiki Kaisha | Microstructure manufacturing method |
-
1979
- 1979-08-02 JP JP9813279A patent/JPS5622942A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58162847A (en) * | 1982-03-23 | 1983-09-27 | Nec Corp | X-ray topography |
| US20110168908A1 (en) * | 2010-01-08 | 2011-07-14 | Canon Kabushiki Kaisha | Microstructure manufacturing method |
| US8895934B2 (en) * | 2010-01-08 | 2014-11-25 | Canon Kabushiki Kaisha | Microstructure manufacturing method |
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