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JPS5459879A - Selective etching method - Google Patents

Selective etching method

Info

Publication number
JPS5459879A
JPS5459879A JP12659677A JP12659677A JPS5459879A JP S5459879 A JPS5459879 A JP S5459879A JP 12659677 A JP12659677 A JP 12659677A JP 12659677 A JP12659677 A JP 12659677A JP S5459879 A JPS5459879 A JP S5459879A
Authority
JP
Japan
Prior art keywords
etched
member layer
circuit substrate
pattern
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12659677A
Other languages
Japanese (ja)
Inventor
Takashi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12659677A priority Critical patent/JPS5459879A/en
Publication of JPS5459879A publication Critical patent/JPS5459879A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE:To reduce environmental pollution and working time and obtain precise and fine patterns by beforehand disposing a circuit substrate provided with the member layer to be etched in an etch gas or etch solution and etching away the member layer of required regions through radiation of laser beams. CONSTITUTION:The member layer to be etched 1 such as Al is deposited on a circuit substrate 2 such as of Si to form the member to be etched 10. Next, a mask 4 having a required pattern 6 is superposed and aligned on the member 10 and is disposed in an environment 14 composed of an etch gas or etch solution by being exposed thereto. Thereafter, heating rays such as infrared ray beams, laser beams, etc. are radiated from the mask 4 side to activate the member layer 11 through the pattern 6 and remove the etching portions 13 while letting said portions corrode. In this way, the circuit substrate 11 having the intended pattern 101 is obtained. Since in this method no resist is used, there is no environmental pollution and shorter time for production is required.
JP12659677A 1977-10-20 1977-10-20 Selective etching method Pending JPS5459879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12659677A JPS5459879A (en) 1977-10-20 1977-10-20 Selective etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12659677A JPS5459879A (en) 1977-10-20 1977-10-20 Selective etching method

Publications (1)

Publication Number Publication Date
JPS5459879A true JPS5459879A (en) 1979-05-14

Family

ID=14939092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12659677A Pending JPS5459879A (en) 1977-10-20 1977-10-20 Selective etching method

Country Status (1)

Country Link
JP (1) JPS5459879A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577938A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Method for forming thin film pattern
US7645356B2 (en) 2003-11-25 2010-01-12 International Business Machines Corporation Method of processing wafers with resonant heating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577938A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Method for forming thin film pattern
US7645356B2 (en) 2003-11-25 2010-01-12 International Business Machines Corporation Method of processing wafers with resonant heating

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