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JPS5617025A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5617025A
JPS5617025A JP9359879A JP9359879A JPS5617025A JP S5617025 A JPS5617025 A JP S5617025A JP 9359879 A JP9359879 A JP 9359879A JP 9359879 A JP9359879 A JP 9359879A JP S5617025 A JPS5617025 A JP S5617025A
Authority
JP
Japan
Prior art keywords
psg
breakdown
semiconductor
semiconductor device
surface protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9359879A
Other languages
Japanese (ja)
Inventor
Yuichi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9359879A priority Critical patent/JPS5617025A/en
Publication of JPS5617025A publication Critical patent/JPS5617025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent deterioration and breakdown of a semiconductor device by eliminating exposed portion of a PSG having large hygroscopicity to prevent impregnation of water contact into the interior of semiconductor through the PSG. CONSTITUTION:A scribing line 5 is formed on an oxide film 2 of an Si substrate 1. A PSG 3a is formed at a side of semiconductor element in predetermined region A from the line 5, a surface protective film 4a is laminated thereon to completely cover the PSG 3a. Since the PSG 3a is coated with the surface protective film 4a when this configuration is divided into chips and is sealed with resin, it can prevent deterioration and breakdown of the semiconductor element and improve the moisture resistance thereof.
JP9359879A 1979-07-20 1979-07-20 Semiconductor device Pending JPS5617025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9359879A JPS5617025A (en) 1979-07-20 1979-07-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9359879A JPS5617025A (en) 1979-07-20 1979-07-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617025A true JPS5617025A (en) 1981-02-18

Family

ID=14086743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9359879A Pending JPS5617025A (en) 1979-07-20 1979-07-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617025A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182544A (en) * 1983-04-01 1984-10-17 Hitachi Micro Comput Eng Ltd Semiconductor integrated circuit device
JPS6018924A (en) * 1983-07-12 1985-01-31 Seiko Epson Corp Manufacture of semiconductor device
JPS61112386A (en) * 1984-11-07 1986-05-30 Hitachi Ltd Semiconductor photodetector
JPS61171245U (en) * 1985-04-11 1986-10-24
JPS62174941A (en) * 1986-01-28 1987-07-31 Nec Corp Semiconductor integrated circuit
JPH0214550A (en) * 1988-06-30 1990-01-18 Mitsubishi Electric Corp Manufacture of dicing line part in semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182544A (en) * 1983-04-01 1984-10-17 Hitachi Micro Comput Eng Ltd Semiconductor integrated circuit device
JPS6018924A (en) * 1983-07-12 1985-01-31 Seiko Epson Corp Manufacture of semiconductor device
JPS61112386A (en) * 1984-11-07 1986-05-30 Hitachi Ltd Semiconductor photodetector
JPS61171245U (en) * 1985-04-11 1986-10-24
JPS62174941A (en) * 1986-01-28 1987-07-31 Nec Corp Semiconductor integrated circuit
JPH0214550A (en) * 1988-06-30 1990-01-18 Mitsubishi Electric Corp Manufacture of dicing line part in semiconductor device

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