JPS6018924A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6018924A JPS6018924A JP58126650A JP12665083A JPS6018924A JP S6018924 A JPS6018924 A JP S6018924A JP 58126650 A JP58126650 A JP 58126650A JP 12665083 A JP12665083 A JP 12665083A JP S6018924 A JPS6018924 A JP S6018924A
- Authority
- JP
- Japan
- Prior art keywords
- film
- psg
- scribe line
- semiconductor device
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、層間絶縁膜［ＰＳＧを用いる半導体装置に関
する。半導体装置（以下ＩＣと略）の層間絶縁膜は、以
前からＰＳＧを用いることが多い。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device using an interlayer insulating film [PSG]. PSG has long been used as an interlayer insulating film for semiconductor devices (hereinafter abbreviated as IC).
これはＰＳＧに含まれるリンが半導体が特性上嫌う、可
動イオン等のゲッタリング効果をもっこと、手軽にかつ
安価に形成出来ること、シリコーン基板との舎外が良い
などの理由からである。ところが、ＰＳＧは、リンを含
んでいるため、非常に吸湿性であり、吸湿した時はリン
酸が出来て、これがＩＣの配線層として用いられている
Ａｐ、を腐食することがある。そのため、ＰＳＧに外部
からの水の侵入を防ぐために、パッシベーション膜を形
成している。ところが、チップにグイシングされた時、
チップ端からの水の侵入によりＡｎ腐食を起こす場合が
あり、この時はスクライブライン周辺のＡ℃（主にポン
ディングパッドの腐食が顕著である。これについて従来
例第１図をもって説明する。シリコン基板１０１上に、
熱酸化膜１０２が形成され、ＰＳＧ膜１０３が層間絶縁
膜として形成されたのち、Ａｆｌボンディングパソド１
０４を設け、パッシベーション膜１０６を形成する。This is because the phosphorus contained in PSG has a gettering effect on mobile ions, which semiconductors dislike due to their characteristics, can be easily and inexpensively formed, and is suitable for use outside of silicone substrates. However, since PSG contains phosphorus, it is highly hygroscopic, and when it absorbs moisture, it produces phosphoric acid, which can corrode Ap used as the wiring layer of an IC. Therefore, a passivation film is formed to prevent water from entering the PSG from the outside. However, when he was attacked by Chip,
Intrusion of water from the edge of the chip may cause An corrosion, and in this case, corrosion of A°C around the scribe line (mainly corrosion of the bonding pad is noticeable. This will be explained with reference to a conventional example shown in FIG. 1.Silicon) On the substrate 101,
After a thermal oxide film 102 is formed and a PSG film 103 is formed as an interlayer insulating film, an Afl bonding pad 1 is formed.
04 is provided, and a passivation film 106 is formed.
ここでスクライブライン１０５は、熱酸化膜１０２及び
ＰＳＧ膜１０３の形成されていない領域である。さて、
このような膜構成をもってＩＣをグイシングすると、ス
クライブライン上の切れ口では上記パッシベーション膜
１０６の一部がかける。Here, the scribe line 105 is an area where the thermal oxide film 102 and the PSG film 103 are not formed. Now,
When an IC with such a film configuration is subjected to guising, a portion of the passivation film 106 is covered at the cut end on the scribe line.
そこで、矢印で示した経路によりスクライブラインに沿
って水分が侵入していく。このときスクライプラインの
際に吸湿性のＰＳＧ膜１０３が存在しているため侵入し
てきた水分はＰＳＧ膜１０５に吸収されていき、水との
反応によって生じたリン酸によりポンディングパッド１
０４が腐食される。本発明は、かかる欠点をのぞくもの
であり、第２図に実施例を示す。シリコン基板上２０１
に熱酸化膜２０２を形成後、ｐｓａ膜を形成するが、こ
のとき・スクライプライン接近部を、エツチング除去し
、熱酸化膜２０２より内側に形成する。Therefore, moisture enters along the scribe line along the path shown by the arrow. At this time, since the hygroscopic PSG film 103 is present in the scribe line, the invading water is absorbed by the PSG film 105, and the phosphoric acid generated by the reaction with water causes the bonding pad to
04 is corroded. The present invention eliminates this drawback, and an embodiment thereof is shown in FIG. On silicon substrate 201
After forming the thermal oxide film 202, a PSA film is formed. At this time, the portion near the scribe line is removed by etching and formed inside the thermal oxide film 202.
次にＡλポンディングパッド２０４及び、パッシベーシ
ョン膜２０５を順次形成する。この工ａをグイシングす
ると、従来例と同様に、スクライプライン上のパッシベ
ーション膜２０５の一部がかける。そこで、矢印で示し
た経路により水分がスクライブラインに沿って侵入しよ
うとするか、従来例と異って、Ｐ Ｓ Ｇ膜２０６が、
スクライブラインより後退しているため、ＰＳＧ膜２０
３は吸湿しないため、ＡＩ！、腐食は防止できる。尚、
ＰＳＧ膜とスクライプライン端の距ＨＡは、実験により
５μｍ程度で効果があった。Next, an Aλ bonding pad 204 and a passivation film 205 are sequentially formed. When this step a is covered, a part of the passivation film 205 on the scribe line is covered, as in the conventional example. Therefore, either the moisture tries to enter along the scribe line through the path shown by the arrow, or unlike the conventional example, the PSG film 206
Since it is set back from the scribe line, the PSG film 20
3 does not absorb moisture, so AI! , corrosion can be prevented. still,
Experiments have shown that a distance HA between the PSG film and the edge of the scribe line of about 5 μm is effective.
第１図・・・従来例のパッド周辺の断面図Ｏ第２図・本
発明のバッド周辺の断面図。
１０４．２０４がＰＳＧ膜である０
以 上
出願人 株式会社諏訪精工舎
代理人 弁ｙ１１士 最上 務FIG. 1: A sectional view around the pad of a conventional example; FIG. 2: A sectional view around the pad of the present invention. 104.204 is a PSG film 0 or more Applicant Suwa Seikosha Co., Ltd. Agent Tsutomu Mogami
Claims (1)
ブライン領域を形成するに、素子分離熱酸化膜より、内
側に層間絶縁層か形成されていることを特徴とする半導
体装置の製造方法。1. A method of manufacturing a semiconductor device, characterized in that an interlayer insulating layer is formed inside an element isolation thermal oxide film to form a scribe line region of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126650A JPS6018924A (en) | 1983-07-12 | 1983-07-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126650A JPS6018924A (en) | 1983-07-12 | 1983-07-12 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6018924A true JPS6018924A (en) | 1985-01-31 |
Family
ID=14940455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58126650A Pending JPS6018924A (en) | 1983-07-12 | 1983-07-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018924A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174952A (en) * | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | Semiconductor device |
| JPS62174953A (en) * | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | Semiconductor device |
| JP4750129B2 (en) * | 2004-12-08 | 2011-08-17 | フィリップ・モーリス・プロダクツ・ソシエテ・アノニム | Side open hinge lid container with audible indication of closure and / or opening |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617025A (en) * | 1979-07-20 | 1981-02-18 | Mitsubishi Electric Corp | Semiconductor device |
-
1983
- 1983-07-12 JP JP58126650A patent/JPS6018924A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617025A (en) * | 1979-07-20 | 1981-02-18 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174952A (en) * | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | Semiconductor device |
| JPS62174953A (en) * | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | Semiconductor device |
| JP4750129B2 (en) * | 2004-12-08 | 2011-08-17 | フィリップ・モーリス・プロダクツ・ソシエテ・アノニム | Side open hinge lid container with audible indication of closure and / or opening |
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