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JPS55163877A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS55163877A
JPS55163877A JP7014779A JP7014779A JPS55163877A JP S55163877 A JPS55163877 A JP S55163877A JP 7014779 A JP7014779 A JP 7014779A JP 7014779 A JP7014779 A JP 7014779A JP S55163877 A JPS55163877 A JP S55163877A
Authority
JP
Japan
Prior art keywords
bonding pad
integrated circuit
circuit device
semiconductor integrated
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7014779A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7014779A priority Critical patent/JPS55163877A/en
Publication of JPS55163877A publication Critical patent/JPS55163877A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the integrity of a semiconductor integrated circuit device by providing a gate field effect semiconductor device through an insulating layer under a bonding pad formed with a metallic layer. CONSTITUTION:A gate oxide film 15 and gate silicon layers G1-G6 are arranged on a silicon substrate 14, an oxide silicon layer 15' is formed for source and drain, and aluminum becoming the bonding pad is evaporated thereon. Since the bonding pad is integrated with the output buffer, the range of occupying the output buffer is not almost necessary. Accordingly, it can improve the integrity of the device.
JP7014779A 1979-06-06 1979-06-06 Semiconductor integrated circuit device Pending JPS55163877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7014779A JPS55163877A (en) 1979-06-06 1979-06-06 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7014779A JPS55163877A (en) 1979-06-06 1979-06-06 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55163877A true JPS55163877A (en) 1980-12-20

Family

ID=13423162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7014779A Pending JPS55163877A (en) 1979-06-06 1979-06-06 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55163877A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199870A (en) * 1989-01-27 1990-08-08 Nec Corp Insulated gate field effect transistor
EP0780897A1 (en) * 1995-12-22 1997-06-25 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe High-speed MOS-technology power device integrated structure with reduced gate resistance
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
JPH10256300A (en) * 1997-03-06 1998-09-25 Hiroshima Nippon Denki Kk Semiconductor device
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5900662A (en) * 1995-11-06 1999-05-04 Sgs Thomson Microelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US5981998A (en) * 1995-10-30 1999-11-09 Sgs-Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6090669A (en) * 1995-10-09 2000-07-18 Consorzio Per La Ricerca Sulla Microelectronics Nel Mezzogiorno Fabrication method for high voltage devices with at least one deep edge ring
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199870A (en) * 1989-01-27 1990-08-08 Nec Corp Insulated gate field effect transistor
US6111297A (en) * 1995-02-24 2000-08-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6090669A (en) * 1995-10-09 2000-07-18 Consorzio Per La Ricerca Sulla Microelectronics Nel Mezzogiorno Fabrication method for high voltage devices with at least one deep edge ring
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US5981998A (en) * 1995-10-30 1999-11-09 Sgs-Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US5985721A (en) * 1995-10-30 1999-11-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US5900662A (en) * 1995-11-06 1999-05-04 Sgs Thomson Microelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
EP0780897A1 (en) * 1995-12-22 1997-06-25 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe High-speed MOS-technology power device integrated structure with reduced gate resistance
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6051862A (en) * 1995-12-28 2000-04-18 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
JPH10256300A (en) * 1997-03-06 1998-09-25 Hiroshima Nippon Denki Kk Semiconductor device

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