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JPS56167371A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS56167371A
JPS56167371A JP7106780A JP7106780A JPS56167371A JP S56167371 A JPS56167371 A JP S56167371A JP 7106780 A JP7106780 A JP 7106780A JP 7106780 A JP7106780 A JP 7106780A JP S56167371 A JPS56167371 A JP S56167371A
Authority
JP
Japan
Prior art keywords
layer
amorphous
sih4
fluorine
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7106780A
Other languages
Japanese (ja)
Other versions
JPS5944793B2 (en
Inventor
Yukinori Kuwano
Michitoshi Onishi
Hidenori Nishiwaki
Shinya Tsuda
Takashi Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP55071067A priority Critical patent/JPS5944793B2/en
Publication of JPS56167371A publication Critical patent/JPS56167371A/en
Publication of JPS5944793B2 publication Critical patent/JPS5944793B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To enhance the efficiency of power generation and to prevent corrosion of a transparent electrode film and a first layer due to fluorine even though fluorine is used in the solar cell wherein amorphous Si is sequentially layered, by forming a second layer with amorphous Si which is treated by hydrogen and fluorine. CONSTITUTION:The transparent electrode film 11 is deposited on a glass plate 10. Glow discharge is performed in B2H6/SiH4=0.1-1% and P type hydrogenated amorphous Si 12 is formed. Then, the glow discharge is performed in SiH4, and an I layer 13a is layered. Thereafter, the glow discharge is performed in SiF4/SiF4+ SiH4=60-80%, and an I layer 13b of hydrogenated/fluorinated amorphous Si is layered. Then, the glow discharge is performed at a volume ratio of PH3/SiH4= 1-3%, and N<+> amorphous Si 14 is formed. An Al electrode film 15 is attached thereon. In this constitution, since most of the I type amorphous layer 13 is hydrogenated/fluorinated amorphous Si, the efficiency is high. The surface of the very thin P layer 12 is not exposed to F because of the presence of the second I layer 13a, and corrosion does not occur. The corrosion of the transparent electrode film 11 by fluorine is also inhibited.
JP55071067A 1980-05-27 1980-05-27 solar cells Expired JPS5944793B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55071067A JPS5944793B2 (en) 1980-05-27 1980-05-27 solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55071067A JPS5944793B2 (en) 1980-05-27 1980-05-27 solar cells

Publications (2)

Publication Number Publication Date
JPS56167371A true JPS56167371A (en) 1981-12-23
JPS5944793B2 JPS5944793B2 (en) 1984-11-01

Family

ID=13449803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55071067A Expired JPS5944793B2 (en) 1980-05-27 1980-05-27 solar cells

Country Status (1)

Country Link
JP (1) JPS5944793B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device

Also Published As

Publication number Publication date
JPS5944793B2 (en) 1984-11-01

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