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JPS56164348A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS56164348A
JPS56164348A JP6755780A JP6755780A JPS56164348A JP S56164348 A JPS56164348 A JP S56164348A JP 6755780 A JP6755780 A JP 6755780A JP 6755780 A JP6755780 A JP 6755780A JP S56164348 A JPS56164348 A JP S56164348A
Authority
JP
Japan
Prior art keywords
gaseous
layer
electrophotographic receptor
chalcogen element
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6755780A
Other languages
Japanese (ja)
Other versions
JPS639222B2 (en
Inventor
Masatoshi Tabei
Mitsuru Ikeda
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP6755780A priority Critical patent/JPS56164348A/en
Priority to DE19813120305 priority patent/DE3120305A1/en
Publication of JPS56164348A publication Critical patent/JPS56164348A/en
Publication of JPS639222B2 publication Critical patent/JPS639222B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE: To obtain an electrophotographic receptor with high dark resistance and satisfactory photoconductive characteristics by adding a very small amount of a chalcogen element to amorphous silicon contg. an element reducing the localization level in the energy gap and by forming a photoconductive layer of the silicon on an electrically conductive support.
CONSTITUTION: Using a mixture of gaseous silane or a gaseous silane deriv. and a gaseous chalcogen element or a gaseous chalcogen compound a photoconductive layer of an amorphous semiconductor consisting of amorphous silicon with a localization level reduced with H or F in the energy gap and very small amount of a chalcogen element such as S, Se or Te is formed on an electrically conductive support by glow discharge decomposition or other mothod in 1W100μm thickness. On the layer a charge carrier transferring layer may be formed by using a charge carrier transferring substance such as nitrofluorenone and a binder resin. Thus, an electrophotographic receptor with high dark resistance and high sensitivity especially in the near infrared region is obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP6755780A 1980-05-21 1980-05-21 Electrophotographic receptor Granted JPS56164348A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6755780A JPS56164348A (en) 1980-05-21 1980-05-21 Electrophotographic receptor
DE19813120305 DE3120305A1 (en) 1980-05-21 1981-05-21 Electrophotographic photoreceptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6755780A JPS56164348A (en) 1980-05-21 1980-05-21 Electrophotographic receptor

Publications (2)

Publication Number Publication Date
JPS56164348A true JPS56164348A (en) 1981-12-17
JPS639222B2 JPS639222B2 (en) 1988-02-26

Family

ID=13348378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6755780A Granted JPS56164348A (en) 1980-05-21 1980-05-21 Electrophotographic receptor

Country Status (2)

Country Link
JP (1) JPS56164348A (en)
DE (1) DE3120305A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58200273A (en) * 1982-05-18 1983-11-21 Fuji Electric Co Ltd Electrophotographic device
DE3427637A1 (en) * 1983-07-26 1985-02-14 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo PHOTO RECEPTOR AND METHOD FOR THE PRODUCTION THEREOF
EP0192473A3 (en) * 1985-02-19 1988-04-06 Exxon Research And Engineering Company Amorphous photoreceptor with high sensitivity to long wavelengths

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element

Also Published As

Publication number Publication date
DE3120305A1 (en) 1982-04-08
DE3120305C2 (en) 1989-05-11
JPS639222B2 (en) 1988-02-26

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