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JPS56138929A - Component solution for etching - Google Patents

Component solution for etching

Info

Publication number
JPS56138929A
JPS56138929A JP4221580A JP4221580A JPS56138929A JP S56138929 A JPS56138929 A JP S56138929A JP 4221580 A JP4221580 A JP 4221580A JP 4221580 A JP4221580 A JP 4221580A JP S56138929 A JPS56138929 A JP S56138929A
Authority
JP
Japan
Prior art keywords
concentration
acid
etching
nitric acid
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4221580A
Other languages
Japanese (ja)
Other versions
JPS6344292B2 (en
Inventor
Yoshiyuki Osada
Masao Sugata
Katsunori Hatanaka
Yukitoshi Okubo
Takashi Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4221580A priority Critical patent/JPS56138929A/en
Publication of JPS56138929A publication Critical patent/JPS56138929A/en
Publication of JPS6344292B2 publication Critical patent/JPS6344292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To enable to perform a selective etching on n<+> amorphous silicon by a method wherein the etching compound solution, consisting of hydrofluoric acid, nitric acid and glacial acetic acid with the concentration of nitric acid of 0.15-0.65 in mixture ratio by volume and the concentration of hydrofluoric acid of below 0.04, is prepared. CONSTITUTION:In the case of etching compound solution consisting of hydrofluoric acid (46% aqueous solution), nitric acid (d=1.38, 60% aqueous solution, 14 normality) and glacial acetic acid, the concentration of nitric acid is to be at 0.15- 0.65 in the mixture ratio by volume and the concentration of hydrofluoric acid is to be below 0.04. The selective etching is performed on an n<+> amorphous silicon using the above solution. Accordingly, the thin film transistor with a glass substrate, a long-sized optical sensor and a thin film IC can be manufactured.
JP4221580A 1980-03-31 1980-03-31 Component solution for etching Granted JPS56138929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4221580A JPS56138929A (en) 1980-03-31 1980-03-31 Component solution for etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4221580A JPS56138929A (en) 1980-03-31 1980-03-31 Component solution for etching

Publications (2)

Publication Number Publication Date
JPS56138929A true JPS56138929A (en) 1981-10-29
JPS6344292B2 JPS6344292B2 (en) 1988-09-05

Family

ID=12629805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4221580A Granted JPS56138929A (en) 1980-03-31 1980-03-31 Component solution for etching

Country Status (1)

Country Link
JP (1) JPS56138929A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS62299035A (en) * 1986-06-18 1987-12-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
WO1989008328A1 (en) * 1988-03-05 1989-09-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Fabrication method for semiconductor device and film formation apparatus for said method
JPH02268468A (en) * 1989-04-10 1990-11-02 Casio Comput Co Ltd Thin film transistor and manufacture thereof
US5580800A (en) * 1993-03-22 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Method of patterning aluminum containing group IIIb Element
US5830786A (en) * 1993-02-22 1998-11-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring
US6211535B1 (en) 1994-11-26 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7367642B2 (en) 2020-09-10 2023-10-24 トヨタ自動車株式会社 Vehicles and static elimination parts

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021366B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021367B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021365B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS62299035A (en) * 1986-06-18 1987-12-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
WO1989008328A1 (en) * 1988-03-05 1989-09-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Fabrication method for semiconductor device and film formation apparatus for said method
JPH02268468A (en) * 1989-04-10 1990-11-02 Casio Comput Co Ltd Thin film transistor and manufacture thereof
US5830786A (en) * 1993-02-22 1998-11-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring
US5580800A (en) * 1993-03-22 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Method of patterning aluminum containing group IIIb Element
US6211535B1 (en) 1994-11-26 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS6344292B2 (en) 1988-09-05

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