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KR920022413A - Silicon Oxide Etching Method of Semiconductor Device - Google Patents

Silicon Oxide Etching Method of Semiconductor Device Download PDF

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Publication number
KR920022413A
KR920022413A KR1019910007706A KR910007706A KR920022413A KR 920022413 A KR920022413 A KR 920022413A KR 1019910007706 A KR1019910007706 A KR 1019910007706A KR 910007706 A KR910007706 A KR 910007706A KR 920022413 A KR920022413 A KR 920022413A
Authority
KR
South Korea
Prior art keywords
silicon oxide
semiconductor device
etching method
oxide etching
oxide film
Prior art date
Application number
KR1019910007706A
Other languages
Korean (ko)
Other versions
KR930008857B1 (en
Inventor
김용헌
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문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910007706A priority Critical patent/KR930008857B1/en
Publication of KR920022413A publication Critical patent/KR920022413A/en
Application granted granted Critical
Publication of KR930008857B1 publication Critical patent/KR930008857B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

내용 없음.No content.

Description

반도체 장치의 규소 산화막 식각방법Silicon Oxide Etching Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

금속박막 증착전 규소 산화막의 식각 공정에 있어서, 불화 암모니움 20, 800cc와 인산 600cc 및 암모니아수 540cc로 식각액을 제조하여 상기 규소 산화막을 20∼25℃에서 식각함을 특징으로 하는 반도체 장치의 규소산화막 식각방법.In the etching process of the silicon oxide film before the deposition of the metal thin film, an etching solution is prepared using 20, 800 cc of ammonium fluoride, 600 cc of phosphoric acid, and 540 cc of ammonia water to etch the silicon oxide film at 20 to 25 ° C. Way. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910007706A 1991-05-13 1991-05-13 Silicon Oxide Etching Method of Semiconductor Device KR930008857B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910007706A KR930008857B1 (en) 1991-05-13 1991-05-13 Silicon Oxide Etching Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007706A KR930008857B1 (en) 1991-05-13 1991-05-13 Silicon Oxide Etching Method of Semiconductor Device

Publications (2)

Publication Number Publication Date
KR920022413A true KR920022413A (en) 1992-12-19
KR930008857B1 KR930008857B1 (en) 1993-09-16

Family

ID=19314368

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007706A KR930008857B1 (en) 1991-05-13 1991-05-13 Silicon Oxide Etching Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR930008857B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100310416B1 (en) * 1997-12-17 2001-12-17 김영환 Semiconductor manufacturing furnace process performance device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100310416B1 (en) * 1997-12-17 2001-12-17 김영환 Semiconductor manufacturing furnace process performance device

Also Published As

Publication number Publication date
KR930008857B1 (en) 1993-09-16

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