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JPS56133877A - Semiconductor diaphragm type sensor - Google Patents

Semiconductor diaphragm type sensor

Info

Publication number
JPS56133877A
JPS56133877A JP3775480A JP3775480A JPS56133877A JP S56133877 A JPS56133877 A JP S56133877A JP 3775480 A JP3775480 A JP 3775480A JP 3775480 A JP3775480 A JP 3775480A JP S56133877 A JPS56133877 A JP S56133877A
Authority
JP
Japan
Prior art keywords
thick
strain producing
single crystal
rigid body
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3775480A
Other languages
Japanese (ja)
Inventor
Masanori Tanabe
Satoshi Shimada
Motohisa Nishihara
Kazuji Yamada
Yoshitaka Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3775480A priority Critical patent/JPS56133877A/en
Publication of JPS56133877A publication Critical patent/JPS56133877A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE:To improve the sensitivity of a semiconductor diaphragm type sensor by a method wherein a thick fixed portion is formed on the periphery of a semiconductor single crystal as a diaphragm material, a thick rigid body portion is formed in the center, and the thin portion therebetween is used as a strain producing portion. CONSTITUTION:A diaphragm 11 made of a semiconductor single crystal of N type silicon consists of a substrate having, e.g.,{100} plane, where a groove-shaped hollow portion 33 is formed by an anisotropic process using alkali etching except for the peripheral thick portion to be a fixed portion 31 and the central thick portion to be a central rigid body 32. The thin portion constituted thereby is used as a strain producing portion 41, on whose upper surface piezoelectric resistance elements 5 are formed by diffusion of P type impurity. The boundary lines between the fixed portion 31 and the strain producing portion 41, and the rigid body portion 32 and the strain producing portion 41 are made to be straight lines perpendicular to the crystal axes <110> of the semiconductor single crystal respectively.
JP3775480A 1980-03-24 1980-03-24 Semiconductor diaphragm type sensor Pending JPS56133877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3775480A JPS56133877A (en) 1980-03-24 1980-03-24 Semiconductor diaphragm type sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3775480A JPS56133877A (en) 1980-03-24 1980-03-24 Semiconductor diaphragm type sensor

Publications (1)

Publication Number Publication Date
JPS56133877A true JPS56133877A (en) 1981-10-20

Family

ID=12506251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3775480A Pending JPS56133877A (en) 1980-03-24 1980-03-24 Semiconductor diaphragm type sensor

Country Status (1)

Country Link
JP (1) JPS56133877A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154180A (en) * 1984-12-27 1986-07-12 Nec Corp Pressure sensor
JPS61154179A (en) * 1984-12-27 1986-07-12 Nec Corp pressure sensor
JPS62158367A (en) * 1985-12-28 1987-07-14 Anritsu Corp Pressure sensor
US5233213A (en) * 1990-07-14 1993-08-03 Robert Bosch Gmbh Silicon-mass angular acceleration sensor
JP2009300197A (en) * 2008-06-12 2009-12-24 Alps Electric Co Ltd Semiconductor pressure sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169678A (en) * 1974-11-06 1976-06-16 Philips Nv

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169678A (en) * 1974-11-06 1976-06-16 Philips Nv

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154180A (en) * 1984-12-27 1986-07-12 Nec Corp Pressure sensor
JPS61154179A (en) * 1984-12-27 1986-07-12 Nec Corp pressure sensor
JPS62158367A (en) * 1985-12-28 1987-07-14 Anritsu Corp Pressure sensor
JPH0564866B2 (en) * 1985-12-28 1993-09-16 Anritsu Corp
US5233213A (en) * 1990-07-14 1993-08-03 Robert Bosch Gmbh Silicon-mass angular acceleration sensor
JP2009300197A (en) * 2008-06-12 2009-12-24 Alps Electric Co Ltd Semiconductor pressure sensor

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