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JPS5522818A - Method of semiconductor pressure sensor chip - Google Patents

Method of semiconductor pressure sensor chip

Info

Publication number
JPS5522818A
JPS5522818A JP9461478A JP9461478A JPS5522818A JP S5522818 A JPS5522818 A JP S5522818A JP 9461478 A JP9461478 A JP 9461478A JP 9461478 A JP9461478 A JP 9461478A JP S5522818 A JPS5522818 A JP S5522818A
Authority
JP
Japan
Prior art keywords
recess
strain gauge
groove
wafer
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9461478A
Other languages
Japanese (ja)
Inventor
Minoru Takahashi
Tomotsugu Inui
Takahiko Tanigami
Hitoshi Minorikawa
Kaoru Uchiyama
Motohisa Nishihara
Komei Yatsuno
Hiroji Kawakami
Kiyomitsu Suzuki
Masao Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9461478A priority Critical patent/JPS5522818A/en
Publication of JPS5522818A publication Critical patent/JPS5522818A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To improve gage resistance charactristic and increase production by jointing a cover element having a recess for cavity and a recess for taking out electrode onto the side in which piezo resistance strain gauge is disposed on Si wafer and cutting and separating by a plane passing through the recess for taking out electrode.
CONSTITUTION: A plural of strain gauge 3 is formed on the sufface of Si basic plate by diffustion and electrodes 4 of Al and the like are attached thereto. While, a cover 5 is made from borosilicate glass having similar heat expansion coefficient with that of Si and a cross groove 7 corresponding to the electrode 4 and a recess 6 are disposed. At that time, the relation of the recess and the groove 7 is such that the recess 6 is positioned in the center of the square 20 surrounded by the groove 7 and pitch of the recess 6 is same with the pitch of the strain gauge 3. Then as the recess 6 and the strain gauge 3 are countermeasured, wafer 1 and element 5 are overlayed and jointed to form thin deformable portion 2 by etching under the strain gauge 3. Then it is cut by the center of the groove 7 and separated into chips and a glass tube 8 is attached.
COPYRIGHT: (C)1980,JPO&Japio
JP9461478A 1978-08-04 1978-08-04 Method of semiconductor pressure sensor chip Pending JPS5522818A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9461478A JPS5522818A (en) 1978-08-04 1978-08-04 Method of semiconductor pressure sensor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9461478A JPS5522818A (en) 1978-08-04 1978-08-04 Method of semiconductor pressure sensor chip

Publications (1)

Publication Number Publication Date
JPS5522818A true JPS5522818A (en) 1980-02-18

Family

ID=14115116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9461478A Pending JPS5522818A (en) 1978-08-04 1978-08-04 Method of semiconductor pressure sensor chip

Country Status (1)

Country Link
JP (1) JPS5522818A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000065662A (en) * 1998-08-20 2000-03-03 Unisia Jecs Corp Pressure sensor and its manufacture
JP2007114064A (en) * 2005-10-20 2007-05-10 Denso Corp Method of manufacturing sensor, and sensor
JP2009224577A (en) * 2008-03-17 2009-10-01 Mitsubishi Electric Corp Element wafer and method for manufacturing the same
JP2010139373A (en) * 2008-12-11 2010-06-24 Ngk Spark Plug Co Ltd Method for manufacturing pressure sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000065662A (en) * 1998-08-20 2000-03-03 Unisia Jecs Corp Pressure sensor and its manufacture
JP2007114064A (en) * 2005-10-20 2007-05-10 Denso Corp Method of manufacturing sensor, and sensor
JP2009224577A (en) * 2008-03-17 2009-10-01 Mitsubishi Electric Corp Element wafer and method for manufacturing the same
JP2010139373A (en) * 2008-12-11 2010-06-24 Ngk Spark Plug Co Ltd Method for manufacturing pressure sensor

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