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JPS5612786A - Photo coupling semiconductor device - Google Patents

Photo coupling semiconductor device

Info

Publication number
JPS5612786A
JPS5612786A JP8741479A JP8741479A JPS5612786A JP S5612786 A JPS5612786 A JP S5612786A JP 8741479 A JP8741479 A JP 8741479A JP 8741479 A JP8741479 A JP 8741479A JP S5612786 A JPS5612786 A JP S5612786A
Authority
JP
Japan
Prior art keywords
titanium oxide
liquid paraffin
thermosetting resin
improve
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8741479A
Other languages
Japanese (ja)
Other versions
JPS6331115B2 (en
Inventor
Akira Yoshizumi
Kazutaka Matsumoto
Michiya Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8741479A priority Critical patent/JPS5612786A/en
Publication of JPS5612786A publication Critical patent/JPS5612786A/en
Publication of JPS6331115B2 publication Critical patent/JPS6331115B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To improve light reflection factor and to improve dampproof and dielectric strength by collectively adding and distributing titanium oxide and liquid paraffin to a mold resin layer. CONSTITUTION:A light emitting element 1 and a light sensitive element 2 are provided on electrode lead wires 3a and 3b respectively and a transparent resin 4 is filled between the elements 1 and 2. Furthermore, the whole is molded by a thermosetting resin constituent 5. The thermosetting resin constituent 5 is composed of the following as essential component: -Epoxy compound containing at least one piece of epoxy radical in a molecule. -At least, one kind of either compound selected from the groups of phenol novolak resin and organic acid anhydride. -Hardening accelerator, inorganic filler, titanium oxide and liquid paraffin.
JP8741479A 1979-07-12 1979-07-12 Photo coupling semiconductor device Granted JPS5612786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8741479A JPS5612786A (en) 1979-07-12 1979-07-12 Photo coupling semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8741479A JPS5612786A (en) 1979-07-12 1979-07-12 Photo coupling semiconductor device

Publications (2)

Publication Number Publication Date
JPS5612786A true JPS5612786A (en) 1981-02-07
JPS6331115B2 JPS6331115B2 (en) 1988-06-22

Family

ID=13914210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8741479A Granted JPS5612786A (en) 1979-07-12 1979-07-12 Photo coupling semiconductor device

Country Status (1)

Country Link
JP (1) JPS5612786A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008073682A1 (en) * 2006-12-07 2008-06-19 3M Innovative Properties Company Light reflecting resin composition, light emitting apparatus and optical display apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6133004B2 (en) * 2009-03-31 2017-05-24 日立化成株式会社 Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, method for manufacturing the same, and optical semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129939A (en) * 1974-05-24 1976-03-13 Texas Instruments Inc
JPS5480691A (en) * 1977-12-12 1979-06-27 Toshiba Corp Photo coupling semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129939A (en) * 1974-05-24 1976-03-13 Texas Instruments Inc
JPS5480691A (en) * 1977-12-12 1979-06-27 Toshiba Corp Photo coupling semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008073682A1 (en) * 2006-12-07 2008-06-19 3M Innovative Properties Company Light reflecting resin composition, light emitting apparatus and optical display apparatus

Also Published As

Publication number Publication date
JPS6331115B2 (en) 1988-06-22

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