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JPS56125848A - Surface treatment of semiconductor - Google Patents

Surface treatment of semiconductor

Info

Publication number
JPS56125848A
JPS56125848A JP2790780A JP2790780A JPS56125848A JP S56125848 A JPS56125848 A JP S56125848A JP 2790780 A JP2790780 A JP 2790780A JP 2790780 A JP2790780 A JP 2790780A JP S56125848 A JPS56125848 A JP S56125848A
Authority
JP
Japan
Prior art keywords
film
interface
semiconductor
ion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2790780A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2790780A priority Critical patent/JPS56125848A/en
Publication of JPS56125848A publication Critical patent/JPS56125848A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To decrease an interface level density existing on the interface and form an stabilized and excellent semiconductor device by a method wherein an ion-injection of Mg, Ca, Ti or Zn is applied to the interface of an insulating film formed on the semiconductor substrate surface and the semiconductor substrate. CONSTITUTION:An SiO2 film and an Si3N4 film are selectively formed on the P type Si substrate 1 and heat-treated in an oxidation atmosphere to form a field oxidation film 4, and then, the surface covered with the oxidation film or the like is slightly oxidized to form a thin (e.g. 500-1,000Angstrom ) SiO2 film and then, at least one element picked out of the Mg, Ca, Ti and Zn is ion-implanted into the interface of the substrate 1 and the SiO2 films 4, 5 to form an ion-implanted region 6 and then anealed. Whereby the interface level density on the semiconductor surface to be formed with channels thereon is made zero to enable the semiconductor device of MOSIC excellent in characteristic.
JP2790780A 1980-03-07 1980-03-07 Surface treatment of semiconductor Pending JPS56125848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2790780A JPS56125848A (en) 1980-03-07 1980-03-07 Surface treatment of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2790780A JPS56125848A (en) 1980-03-07 1980-03-07 Surface treatment of semiconductor

Publications (1)

Publication Number Publication Date
JPS56125848A true JPS56125848A (en) 1981-10-02

Family

ID=12233948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2790780A Pending JPS56125848A (en) 1980-03-07 1980-03-07 Surface treatment of semiconductor

Country Status (1)

Country Link
JP (1) JPS56125848A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117749A (en) * 1987-09-21 2000-09-12 National Semiconductor Corporation Modification of interfacial fields between dielectrics and semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117749A (en) * 1987-09-21 2000-09-12 National Semiconductor Corporation Modification of interfacial fields between dielectrics and semiconductors

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