JPS57102048A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57102048A JPS57102048A JP17946980A JP17946980A JPS57102048A JP S57102048 A JPS57102048 A JP S57102048A JP 17946980 A JP17946980 A JP 17946980A JP 17946980 A JP17946980 A JP 17946980A JP S57102048 A JPS57102048 A JP S57102048A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- type
- silicon
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To enhance yield of manufacture of a semiconductor device by a method wherein a gap is provided in the semiconductor device to absorb expansion of volume to be generated when silicon is oxidized. CONSTITUTION:An N type buried region 22, a P type preparatory isolation region 23, and an N type epitaxial growth layer 24 are piled up on a P type semiconductor silicon substrate 21. An oxide film 25 is provided, and an opening part 25a is formed in the isolation region. Then a silicon nitride film 27, silicon oxide films 28, 29 are laminated, and the Si layer 29 is etched by sputter etching. After then, when the Si region 29' is oxidized in the oxygen atmosphere containing steam, the region 29' is converted into the silicon oxide region 29'' to form the insulating isolation region 29''. At this time, the gap 30 between the Si region 29'' and the active regions 24a, 24b is buried by expansion of volume to be generated by oxidation of the Si region 29''.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17946980A JPS57102048A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17946980A JPS57102048A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57102048A true JPS57102048A (en) | 1982-06-24 |
Family
ID=16066387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17946980A Pending JPS57102048A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57102048A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661073A (en) * | 1995-08-11 | 1997-08-26 | Micron Technology, Inc. | Method for forming field oxide having uniform thickness |
-
1980
- 1980-12-17 JP JP17946980A patent/JPS57102048A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661073A (en) * | 1995-08-11 | 1997-08-26 | Micron Technology, Inc. | Method for forming field oxide having uniform thickness |
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