JPS56124278A - Photoelectric transducer - Google Patents
Photoelectric transducerInfo
- Publication number
- JPS56124278A JPS56124278A JP2705480A JP2705480A JPS56124278A JP S56124278 A JPS56124278 A JP S56124278A JP 2705480 A JP2705480 A JP 2705480A JP 2705480 A JP2705480 A JP 2705480A JP S56124278 A JPS56124278 A JP S56124278A
- Authority
- JP
- Japan
- Prior art keywords
- film
- refractive index
- thickness
- photoelectric transducer
- piled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a photoelectric transducer of high efficiency and reliability by piling two kinds of thin films each having given refractive index and film thickness on the surface on which light is made incident. CONSTITUTION:On N type GaAs 1, P type GaAs 2 and P type Ga1-XAlXAs 4 are piled. Then, (a) film 8, e.g., Si3N4, of refractive index 1.8-2.5 and thickness 600-900Angstrom and a film 9, e.g., SiO2, of refractive index less than 1.5 and thickness more than 5,000Angstrom are piled thereon to constitute a solar cell. Thereby, the film 9 prevents the reflection of the incident rays and the film 8 prevents the invasion of moisture, so that it is possible to obtain a device of high efficiency and reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2705480A JPS56124278A (en) | 1980-03-03 | 1980-03-03 | Photoelectric transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2705480A JPS56124278A (en) | 1980-03-03 | 1980-03-03 | Photoelectric transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56124278A true JPS56124278A (en) | 1981-09-29 |
Family
ID=12210350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2705480A Pending JPS56124278A (en) | 1980-03-03 | 1980-03-03 | Photoelectric transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56124278A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102723370A (en) * | 2012-06-18 | 2012-10-10 | 湖南红太阳光电科技有限公司 | Wide spectrum multilayered antireflection passivation film for solar cell |
-
1980
- 1980-03-03 JP JP2705480A patent/JPS56124278A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102723370A (en) * | 2012-06-18 | 2012-10-10 | 湖南红太阳光电科技有限公司 | Wide spectrum multilayered antireflection passivation film for solar cell |
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