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JPS56122129A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56122129A
JPS56122129A JP2483180A JP2483180A JPS56122129A JP S56122129 A JPS56122129 A JP S56122129A JP 2483180 A JP2483180 A JP 2483180A JP 2483180 A JP2483180 A JP 2483180A JP S56122129 A JPS56122129 A JP S56122129A
Authority
JP
Japan
Prior art keywords
substrate
gas
etching
dry etching
chloride gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2483180A
Other languages
Japanese (ja)
Other versions
JPH0123938B2 (en
Inventor
Yukinori Kuroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2483180A priority Critical patent/JPS56122129A/en
Publication of JPS56122129A publication Critical patent/JPS56122129A/en
Publication of JPH0123938B2 publication Critical patent/JPH0123938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remove a defective surface layer of a semiconductor, device by dry etching a nitride or oxide film on an Si substrate with gas containing C, F or Cl, and treating the exposed substrate with O2 gas plasma containing fluorocarbon chloride gas. CONSTITUTION:A silicon nitride film or a silicon oxide film formed on an Si substrate is so etched as to expose the Si substrate by a dry etching technique such as a parallel flat plate type plasma etching, a reactive spatter etching, a reactive ion shower etching or the like using fluorocarbon chloride gas such as CF4+H2, CHF3, C2F6, C3F8, C4F8, CClF3+H2 or the like. Thereafter, it is surface treated in oxygen plasma gas containing 10mol% of fluorocarbon chloride gas at maximum. Thus, the defective layer of the Si substrate caused by the dry etching process can be removed, and the electic properties of the device thus manufactured can be improved.
JP2483180A 1980-02-28 1980-02-28 Manufacture of semiconductor device Granted JPS56122129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2483180A JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2483180A JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56122129A true JPS56122129A (en) 1981-09-25
JPH0123938B2 JPH0123938B2 (en) 1989-05-09

Family

ID=12149135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2483180A Granted JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56122129A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114235A (en) * 1981-01-08 1982-07-16 Toshiba Corp Cleaning of semiconductor substrate
JPS5893235A (en) * 1981-11-30 1983-06-02 Toshiba Corp Preparation of semiconductor device
JPS58161327A (en) * 1982-03-02 1983-09-24 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing integrated circuit device for directly performing mode insulation in anisotropic etching step
JPS59161823A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Anisotropic etching control method
JPS6098626A (en) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd Surface treating method of semiconductor layer
JPS6197824A (en) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd Formation of contact hole of semiconductor device
JPS61281531A (en) * 1985-06-07 1986-12-11 Hitachi Ltd Plasma treatment method
JPH03145725A (en) * 1989-10-20 1991-06-20 Internatl Business Mach Corp <Ibm> Etching method
JPH0494534A (en) * 1990-08-10 1992-03-26 Dainippon Screen Mfg Co Ltd Surface treatment of substrate
JPH056877A (en) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd Etching method of carbon film
US6143125A (en) * 1996-09-20 2000-11-07 Nec Corporation Apparatus and method for dry etching
US6551924B1 (en) * 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP2021034655A (en) * 2019-08-28 2021-03-01 東京エレクトロン株式会社 Etching processing method and etching device
CN112635317A (en) * 2019-09-24 2021-04-09 东京毅力科创株式会社 Etching method, method for removing damaged layer, and storage medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124683A (en) * 1978-03-20 1979-09-27 Nippon Telegr & Teleph Corp <Ntt> Processing method of silicon wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124683A (en) * 1978-03-20 1979-09-27 Nippon Telegr & Teleph Corp <Ntt> Processing method of silicon wafer

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114235A (en) * 1981-01-08 1982-07-16 Toshiba Corp Cleaning of semiconductor substrate
JPS5893235A (en) * 1981-11-30 1983-06-02 Toshiba Corp Preparation of semiconductor device
JPS58161327A (en) * 1982-03-02 1983-09-24 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing integrated circuit device for directly performing mode insulation in anisotropic etching step
JPS59161823A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Anisotropic etching control method
JPS6098626A (en) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd Surface treating method of semiconductor layer
JPH0329173B2 (en) * 1983-11-02 1991-04-23 Oki Electric Ind Co Ltd
JPH0518455B2 (en) * 1984-10-18 1993-03-12 Sanyo Electric Co
JPS6197824A (en) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd Formation of contact hole of semiconductor device
JPH0646630B2 (en) * 1985-06-07 1994-06-15 株式会社日立製作所 Plasma processing method
JPS61281531A (en) * 1985-06-07 1986-12-11 Hitachi Ltd Plasma treatment method
JPH03145725A (en) * 1989-10-20 1991-06-20 Internatl Business Mach Corp <Ibm> Etching method
JPH0494534A (en) * 1990-08-10 1992-03-26 Dainippon Screen Mfg Co Ltd Surface treatment of substrate
JPH056877A (en) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd Etching method of carbon film
US6143125A (en) * 1996-09-20 2000-11-07 Nec Corporation Apparatus and method for dry etching
US6551924B1 (en) * 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP2021034655A (en) * 2019-08-28 2021-03-01 東京エレクトロン株式会社 Etching processing method and etching device
CN112635317A (en) * 2019-09-24 2021-04-09 东京毅力科创株式会社 Etching method, method for removing damaged layer, and storage medium

Also Published As

Publication number Publication date
JPH0123938B2 (en) 1989-05-09

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