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JPS56114382A - Neutron detecting device of semiconductor - Google Patents

Neutron detecting device of semiconductor

Info

Publication number
JPS56114382A
JPS56114382A JP1652780A JP1652780A JPS56114382A JP S56114382 A JPS56114382 A JP S56114382A JP 1652780 A JP1652780 A JP 1652780A JP 1652780 A JP1652780 A JP 1652780A JP S56114382 A JPS56114382 A JP S56114382A
Authority
JP
Japan
Prior art keywords
layer
neutrons
electrodes
electrode
nucleus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1652780A
Other languages
English (en)
Other versions
JPS6142433B2 (ja
Inventor
Toshiro Ogino
Akitsu Takeda
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1652780A priority Critical patent/JPS56114382A/ja
Publication of JPS56114382A publication Critical patent/JPS56114382A/ja
Publication of JPS6142433B2 publication Critical patent/JPS6142433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP1652780A 1980-02-15 1980-02-15 Neutron detecting device of semiconductor Granted JPS56114382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1652780A JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1652780A JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Publications (2)

Publication Number Publication Date
JPS56114382A true JPS56114382A (en) 1981-09-08
JPS6142433B2 JPS6142433B2 (ja) 1986-09-20

Family

ID=11918737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1652780A Granted JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Country Status (1)

Country Link
JP (1) JPS56114382A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545281B1 (en) * 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
WO2010011859A3 (en) * 2008-07-24 2010-05-06 The Regents Of The University Of California Layered semiconductor neutron detectors
JP2015087115A (ja) * 2013-10-28 2015-05-07 日立Geニュークリア・エナジー株式会社 中性子数分析装置および放射線計測装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545281B1 (en) * 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
WO2010011859A3 (en) * 2008-07-24 2010-05-06 The Regents Of The University Of California Layered semiconductor neutron detectors
JP2015087115A (ja) * 2013-10-28 2015-05-07 日立Geニュークリア・エナジー株式会社 中性子数分析装置および放射線計測装置

Also Published As

Publication number Publication date
JPS6142433B2 (ja) 1986-09-20

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