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JPS5739585A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS5739585A
JPS5739585A JP55115057A JP11505780A JPS5739585A JP S5739585 A JPS5739585 A JP S5739585A JP 55115057 A JP55115057 A JP 55115057A JP 11505780 A JP11505780 A JP 11505780A JP S5739585 A JPS5739585 A JP S5739585A
Authority
JP
Japan
Prior art keywords
electrode
mounting frame
electrode leading
detecting elements
leading wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55115057A
Other languages
Japanese (ja)
Inventor
Toru Sugita
Yujiro Naruse
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55115057A priority Critical patent/JPS5739585A/en
Publication of JPS5739585A publication Critical patent/JPS5739585A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To facilitate the wiring of an electrode leading wire even when detecting elements are mounted in a high density by providing an electrode leading wiring plate separately from the mounting frame of the detectors. CONSTITUTION:A mounting frame 1 containing detecting elements 2 is interposed between two through hole substrates 3, 4, an Au deposited film 23 of the positive electrode of the detecting element 2 is mounted via the conductor film 31 of the substrate 3 with an electrode leading wire 32, and an auminum deposited film 24 of negative electrode of the detecting element 2 is mounted via the conductor film 41 of the substrate 4 with an electrode leading wire 42. A containing mounting frame is formed of insulator, e.g., glass epoxy resin. A conductive buffer, e.g., conductive rubber or the like is interposed between the wiring plate and the electrode faces of the respective detecting elements.
JP55115057A 1980-08-21 1980-08-21 Semiconductor radiation detector Pending JPS5739585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55115057A JPS5739585A (en) 1980-08-21 1980-08-21 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55115057A JPS5739585A (en) 1980-08-21 1980-08-21 Semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS5739585A true JPS5739585A (en) 1982-03-04

Family

ID=14653099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55115057A Pending JPS5739585A (en) 1980-08-21 1980-08-21 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS5739585A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109981U (en) * 1983-01-17 1984-07-24 横河電機株式会社 Multi-channel radiation detector
JPS60121372U (en) * 1984-01-24 1985-08-16 シチズン時計株式会社 Mobile TV with electronic camera
WO2000072381A1 (en) * 1999-05-25 2000-11-30 Commissariat A L'energie Atomique Detector with semiconductor for detecting ionizing radiation
JP2001318155A (en) * 2000-02-28 2001-11-16 Toshiba Corp Radiation detector and x-ray ct device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109981U (en) * 1983-01-17 1984-07-24 横河電機株式会社 Multi-channel radiation detector
JPS60121372U (en) * 1984-01-24 1985-08-16 シチズン時計株式会社 Mobile TV with electronic camera
WO2000072381A1 (en) * 1999-05-25 2000-11-30 Commissariat A L'energie Atomique Detector with semiconductor for detecting ionizing radiation
FR2794287A1 (en) * 1999-05-25 2000-12-01 Commissariat Energie Atomique SEMICONDUCTOR DETECTOR FOR THE DETECTION OF IONIZING RADIATION
EP1188187B1 (en) * 1999-05-25 2009-09-23 Commissariat A L'energie Atomique Semiconductor detector for detecting ionizing radiation
JP2001318155A (en) * 2000-02-28 2001-11-16 Toshiba Corp Radiation detector and x-ray ct device

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