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JPS56107394A - Semiconductor memory circuit - Google Patents

Semiconductor memory circuit

Info

Publication number
JPS56107394A
JPS56107394A JP906780A JP906780A JPS56107394A JP S56107394 A JPS56107394 A JP S56107394A JP 906780 A JP906780 A JP 906780A JP 906780 A JP906780 A JP 906780A JP S56107394 A JPS56107394 A JP S56107394A
Authority
JP
Japan
Prior art keywords
transistor
write
semiconductor memory
node
stability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP906780A
Other languages
Japanese (ja)
Inventor
Shigeru Koshimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP906780A priority Critical patent/JPS56107394A/en
Publication of JPS56107394A publication Critical patent/JPS56107394A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To increase the stability of operation of a semiconductor memory circuit, by making the threshold voltages of two sets of drive elements of static cell artificially different values. CONSTITUTION:The threshold value of drive transistors T1, T2 connected with load elements R1, R2 of polycrystal silicon high resistance constituting static memory cell, is changed with artificial processing such as ion platation and the threshold value of the transistor T1 is, e.g., selected lower than T2, the margin of low potential write-in to the node B is increased. No effect is given to the high potential write-in via the transistor T2 to the node A and the memory cell makes stable operation without malfunction. Further, when the digit drive transistor T5 is provided and the digit line level is made low level at write-in, the stability of operation can further be increased.
JP906780A 1980-01-29 1980-01-29 Semiconductor memory circuit Pending JPS56107394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP906780A JPS56107394A (en) 1980-01-29 1980-01-29 Semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP906780A JPS56107394A (en) 1980-01-29 1980-01-29 Semiconductor memory circuit

Publications (1)

Publication Number Publication Date
JPS56107394A true JPS56107394A (en) 1981-08-26

Family

ID=11710258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP906780A Pending JPS56107394A (en) 1980-01-29 1980-01-29 Semiconductor memory circuit

Country Status (1)

Country Link
JP (1) JPS56107394A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475638A (en) * 1992-04-30 1995-12-12 Mitsubishi Denki Kabushiki Kaisha Static random access memory device having a single bit line configuration
FR2891652A1 (en) * 2005-10-03 2007-04-06 St Microelectronics Sa Static random access memory cell, has bistable circuit with two nMOS transistors and two switch transistors having respective threshold voltages, where one threshold voltage is greater than other threshold voltage

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475638A (en) * 1992-04-30 1995-12-12 Mitsubishi Denki Kabushiki Kaisha Static random access memory device having a single bit line configuration
US5572469A (en) * 1992-04-30 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Static random access memory device having a single bit line configuration
US5694354A (en) * 1992-04-30 1997-12-02 Mitsubishi Denki Kabushiki Kaisha Static random access memory device having a single bit line configuration
FR2891652A1 (en) * 2005-10-03 2007-04-06 St Microelectronics Sa Static random access memory cell, has bistable circuit with two nMOS transistors and two switch transistors having respective threshold voltages, where one threshold voltage is greater than other threshold voltage

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