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JPS57150192A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS57150192A
JPS57150192A JP3633281A JP3633281A JPS57150192A JP S57150192 A JPS57150192 A JP S57150192A JP 3633281 A JP3633281 A JP 3633281A JP 3633281 A JP3633281 A JP 3633281A JP S57150192 A JPS57150192 A JP S57150192A
Authority
JP
Japan
Prior art keywords
memory cell
write
leakage current
floating gate
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3633281A
Other languages
Japanese (ja)
Other versions
JPS6126158B2 (en
Inventor
Masamichi Asano
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3633281A priority Critical patent/JPS57150192A/en
Publication of JPS57150192A publication Critical patent/JPS57150192A/en
Publication of JPS6126158B2 publication Critical patent/JPS6126158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To increase a write margin through the reduction in a leakage current of a non-selection memory cell without lowering the injection efficiency of electrons to a floating gate, by setting the source of the memory cell selected at write to almost ground level. CONSTITUTION:When a row line R1 is selected via a row decoder 60, a diffusion layer is connected, and transistors T31... prevented for the reduction in current provided at output bit circuits 101... turn on and the source of memory cells M11-M1n selected is set to almost ground potential. Thus, the write is made in the state that the leakage current to the non-selection memory cell due to floating of a floating gate potential and punch-through is effectively suppressed. As a result, the leakage current to the non-selection memory cell is reduced without lowering the injection efficiency of electrons to the floating gate, and a non-volatile semiconductor memory device having large write-in margin is obtained.
JP3633281A 1981-03-13 1981-03-13 Non-volatile semiconductor memory device Granted JPS57150192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3633281A JPS57150192A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3633281A JPS57150192A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57150192A true JPS57150192A (en) 1982-09-16
JPS6126158B2 JPS6126158B2 (en) 1986-06-19

Family

ID=12466867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3633281A Granted JPS57150192A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57150192A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052999A (en) * 1983-07-11 1985-03-26 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Memory device
JPS63193400A (en) * 1987-02-06 1988-08-10 Nec Corp Electrically writable read-only memory
JPH0247922A (en) * 1988-08-09 1990-02-16 Kawasaki Steel Corp Programmable logic element
US5677875A (en) * 1995-02-28 1997-10-14 Nec Corporation Non-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit lines
JP2005353257A (en) * 2004-06-08 2005-12-22 Samsung Electronics Co Ltd Semiconductor memory device
JP2009158094A (en) * 2009-04-14 2009-07-16 Renesas Technology Corp Nonvolatile storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56501141A (en) * 1979-09-17 1981-08-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56501141A (en) * 1979-09-17 1981-08-13

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052999A (en) * 1983-07-11 1985-03-26 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Memory device
JPS63193400A (en) * 1987-02-06 1988-08-10 Nec Corp Electrically writable read-only memory
JPH0247922A (en) * 1988-08-09 1990-02-16 Kawasaki Steel Corp Programmable logic element
US5677875A (en) * 1995-02-28 1997-10-14 Nec Corporation Non-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit lines
JP2005353257A (en) * 2004-06-08 2005-12-22 Samsung Electronics Co Ltd Semiconductor memory device
JP2009158094A (en) * 2009-04-14 2009-07-16 Renesas Technology Corp Nonvolatile storage device

Also Published As

Publication number Publication date
JPS6126158B2 (en) 1986-06-19

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