JPS5598832A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5598832A JPS5598832A JP695779A JP695779A JPS5598832A JP S5598832 A JPS5598832 A JP S5598832A JP 695779 A JP695779 A JP 695779A JP 695779 A JP695779 A JP 695779A JP S5598832 A JPS5598832 A JP S5598832A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- region
- substrate
- effected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To taper an opening and prevent the snapping of metal wiring provided in the opening, by combining an oxidizer with silazane and performing surface treatment when making the opening in an insulating film on a semiconductor substrate provided with a diffused region.
CONSTITUTION: An oxide film 13 is coated on a p-type Si substrate 11 and provided with an opening to produce an n+-type region 12 by diffusion. At that time, a PSG film 14 is also produced. The substrate 11 is dipped in a mixed liquid containing a hydrogen peroxide solution and aqueous ammonia. As a result, the film 14 on the region 12 is removed and the film 14 on the oxide film 13 is changed into a film 14a of small thickness. A mask 15 made of a photoresist film and having an opening is provided on the film 14a. Hexamethyldisilazane treatment is effected to raise and stabilize the adhesive power between the film 14a and the mask 15. A hole is opened through the exposed film 14 and then through the film 13. Etching is effected by an ammonium fluoride mixed liquid to provide the film 13 with an opening which has a small angle θ12 approximate to that θ11 of the opening over the resion 12.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP695779A JPS5598832A (en) | 1979-01-23 | 1979-01-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP695779A JPS5598832A (en) | 1979-01-23 | 1979-01-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5598832A true JPS5598832A (en) | 1980-07-28 |
Family
ID=11652695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP695779A Pending JPS5598832A (en) | 1979-01-23 | 1979-01-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5598832A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7411211B1 (en) * | 1999-07-22 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
-
1979
- 1979-01-23 JP JP695779A patent/JPS5598832A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7411211B1 (en) * | 1999-07-22 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
| US7626202B2 (en) | 1999-07-22 | 2009-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
| US7956359B2 (en) | 1999-07-22 | 2011-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
| US8258515B2 (en) | 1999-07-22 | 2012-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
| US8368076B2 (en) | 1999-07-22 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
| US8624253B2 (en) | 1999-07-22 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
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