JPS5632747A - Semiconductor device - Google Patents

Abstract

PURPOSE:To stabilize the electrode wiring layer in the semiconductor device by forming an alloy layer of other metal on the surface layer of the wiring layer when coating an insulating film on a semiconductor substrate having a diffused region, perforating an opening thereat and forming the wiring layer making contact with the diffused region on the film while extending it on the film. CONSTITUTION:An SiO2 film 12 is coated on the P type Si substrate 11, an opening is perforated at the position corresponding to a diffused region, and an N type impurity is diffused to form an N type region 13. Then, an aluminum wiring layer 14 making contact with the region 13 is coated on the film 12 thus retained while extending it on the film 12, ions of Ti or the like different from the layer 14 is implanted thereto, is heat treated in a nonoxidizable atmosphere, and only the surface layer of the layer 14 is transformed into an Al-Ti alloy layer 15. When a PSG film 16 is thereafter coated on the entire surface, no projection occurs on the layer 14 even by the heat treatment when coating the film 16 thereon, and the layer 15 not be corroded with a phosphoric acid produced from the film 16 upon reaction with water content existed around the periphery.