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JPS5596651A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5596651A
JPS5596651A JP421679A JP421679A JPS5596651A JP S5596651 A JPS5596651 A JP S5596651A JP 421679 A JP421679 A JP 421679A JP 421679 A JP421679 A JP 421679A JP S5596651 A JPS5596651 A JP S5596651A
Authority
JP
Japan
Prior art keywords
substrate
cross
section
semiconductor device
inverted trapezoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP421679A
Other languages
Japanese (ja)
Inventor
Masayuki Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP421679A priority Critical patent/JPS5596651A/en
Publication of JPS5596651A publication Critical patent/JPS5596651A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To readily fabricate and enhance the reliability of a semiconductor device by providing an etching groove having inverted trapezoid at cross section.
CONSTITUTION: A buried layer 2 and an epitaxial layer 3 are sequentially formed on the silicon substrate 1 having a main plane (100), and an SiO2 film 5 is perforated with an opening to execute an atisotropic etching therethrough. The composition and liquid temperature of an etching solution are selected to form a separated groove of inverted trapezoid in cross section at the substrate 1. The thermal strain stress is scattered at the following step by the cross section of inverted trapezoid to thereby prevent substantially the crack of the substrate. Since there is no acute angle portion when connecting metal wires 8 to the substrate, no accident such as fine cracks and irregular thickness of the metal-deposited film occurs in case of V-shaped groove to thus improve the reliability of the semiconductor device.
COPYRIGHT: (C)1980,JPO&Japio
JP421679A 1979-01-16 1979-01-16 Semiconductor device Pending JPS5596651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP421679A JPS5596651A (en) 1979-01-16 1979-01-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP421679A JPS5596651A (en) 1979-01-16 1979-01-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5596651A true JPS5596651A (en) 1980-07-23

Family

ID=11578414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP421679A Pending JPS5596651A (en) 1979-01-16 1979-01-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5596651A (en)

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