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JPS6450542A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6450542A
JPS6450542A JP20859287A JP20859287A JPS6450542A JP S6450542 A JPS6450542 A JP S6450542A JP 20859287 A JP20859287 A JP 20859287A JP 20859287 A JP20859287 A JP 20859287A JP S6450542 A JPS6450542 A JP S6450542A
Authority
JP
Japan
Prior art keywords
integrated circuit
region
circuit section
cracks
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20859287A
Other languages
Japanese (ja)
Inventor
Yasunori Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20859287A priority Critical patent/JPS6450542A/en
Publication of JPS6450542A publication Critical patent/JPS6450542A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent cracks from being propagated to the inside of a semiconductor chip by stress or the like in an assembling process and to obtain a semiconductor device having improved reliability, by providing a region for inhibiting propagation of cracks around an integrated circuit section and within a dicing line region. CONSTITUTION:In a semiconductor integrated circuit device having an integrated circuit section 6 provided at the center of a semiconductor chip on a substrate 1 and a dicing line region 4 surrounding the integrated circuit section 6, a region 7 for preventing propagation of cracks is provided around the integrated circuit section 6 and within the dicing line region 4. According to an embodiment, said crack propagation preventing region 7 is formed by removing a part of an insulation film 2, a passivation film 3 and a glass coat 5 so as to expose a part of the semiconductor substrate 1. In this manner, any cracks produced from microcracks in the dicing region can be prevented from being propagated to the inside of the semiconductor chip by the crack preventing region. Thus, the reliability of the semiconductor device can be improved.
JP20859287A 1987-08-21 1987-08-21 Semiconductor integrated circuit device Pending JPS6450542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20859287A JPS6450542A (en) 1987-08-21 1987-08-21 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20859287A JPS6450542A (en) 1987-08-21 1987-08-21 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6450542A true JPS6450542A (en) 1989-02-27

Family

ID=16558747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20859287A Pending JPS6450542A (en) 1987-08-21 1987-08-21 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6450542A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2365621A (en) * 2000-01-24 2002-02-20 Nec Corp Semiconductor device with protection film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2365621A (en) * 2000-01-24 2002-02-20 Nec Corp Semiconductor device with protection film
US6465872B2 (en) 2000-01-24 2002-10-15 Nec Corporation Semiconductor device
GB2365621B (en) * 2000-01-24 2004-07-14 Nec Corp Semiconductor device

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