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JPS5586118A - Alignment mark formation - Google Patents

Alignment mark formation

Info

Publication number
JPS5586118A
JPS5586118A JP16162578A JP16162578A JPS5586118A JP S5586118 A JPS5586118 A JP S5586118A JP 16162578 A JP16162578 A JP 16162578A JP 16162578 A JP16162578 A JP 16162578A JP S5586118 A JPS5586118 A JP S5586118A
Authority
JP
Japan
Prior art keywords
alignment mark
mark formation
improved
integrity
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16162578A
Other languages
Japanese (ja)
Other versions
JPS6110974B2 (en
Inventor
Ryuichi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16162578A priority Critical patent/JPS5586118A/en
Publication of JPS5586118A publication Critical patent/JPS5586118A/en
Publication of JPS6110974B2 publication Critical patent/JPS6110974B2/ja
Granted legal-status Critical Current

Links

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To prevent an element from deteriorating in integrity by forming an alignment mark with a material of different reflection factor on a resist.
CONSTITUTION: Electron beam exposing resists 2(polyisoprene), 3 (novolak) are laminated on an Si sbstrate 1 for which elements are already formed, and a mark pattern is formed on a layer 3. Next, thin films 5a, 5b of Cr different in reflection factor of electron from the resists are metallized, and the layer 3 is dissolved to form a pattern by the film 5b. According to this method, an element integrity is improved and also a mark detection sensitivity is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP16162578A 1978-12-23 1978-12-23 Alignment mark formation Granted JPS5586118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16162578A JPS5586118A (en) 1978-12-23 1978-12-23 Alignment mark formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162578A JPS5586118A (en) 1978-12-23 1978-12-23 Alignment mark formation

Publications (2)

Publication Number Publication Date
JPS5586118A true JPS5586118A (en) 1980-06-28
JPS6110974B2 JPS6110974B2 (en) 1986-04-01

Family

ID=15738730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162578A Granted JPS5586118A (en) 1978-12-23 1978-12-23 Alignment mark formation

Country Status (1)

Country Link
JP (1) JPS5586118A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256849B1 (en) * 1998-02-19 2001-07-10 Samsung Electro-Mechanics., Ltd. Method for fabricating microactuator for inkjet head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256849B1 (en) * 1998-02-19 2001-07-10 Samsung Electro-Mechanics., Ltd. Method for fabricating microactuator for inkjet head
CN1096358C (en) * 1998-02-19 2002-12-18 三星电子株式会社 Method for fabricating microactuator for inkjet head

Also Published As

Publication number Publication date
JPS6110974B2 (en) 1986-04-01

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